@inbook{ad212c0b77cf4bc1a25ad8b6e2612a55,
title = "A defect characterization technique for the sidewall surface of Nano-ridge and Nanowire based Logic and RF technologies",
abstract = "We introduce a set of new characterization techniques for the direct defect analysis of the sidewall surfaces of Nano-ridge, Nanowire, and FinFET based devices, being used in current (and future) logic and RF technologies. We demonstrate the application of these techniques on GaAs mesa, Nano-ridge, and InGaAs nano-wire based PIN diodes where surface defect densities are difficult to extract currently. We show that a close match in extracted density, with both measured data and calibrated TCAD simulations of above device types, is achieved validating the applicability of the techniques.",
keywords = "Hetero-junction Bipolar transistor, III-V, III-V defects, Nano-ridge devices, Nano-wire sidewall defects",
author = "A. Vais and B. Hsu and O. Syshchyk and H. Yu and A. Alian and Y. Mols and Kodandarama, \{K. V.\} and B. Kunert and N. Waldron and E. Simoen and N. Collaert",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 2021 IEEE International Reliability Physics Symposium, IRPS 2021 ; Conference date: 21-03-2021 Through 24-03-2021",
year = "2021",
month = mar,
doi = "10.1109/IRPS46558.2021.9405095",
language = "English",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 IEEE International Reliability Physics Symposium, IRPS 2021 - Proceedings",
address = "United States",
}