@inbook{5bdfcea01dfe465e86ec817517b9e859,
title = "A first-principle assessment at atomistic scale of interface phenomena in down-scaling hafnium-based metal-insulator-metal diodes",
abstract = "In this paper, we present first-principle calculations to study the electrical properties of hafnium oxide (HfO2)-based metal-insulator-metal (MIM) diodes. These devices have been simulated by interposing 3 nm of HfO2 between drain and source contacts made of gold and platinum, respectively. The monoclinic and orthorhombic polymorphs of HfO2 have been considered to model different MIM diodes, and the interface geometries have been optimized to compute the I-V characteristics. The simulation results demonstrate the influence of the HfO2 polymorphs on the MIM properties and the importance to understand the interface phenomena that are related to the measurable properties of the proposed devices.",
keywords = "DFT, diodes, ferroelectric materials, hafnium compounds, I-V characteristics, interface, optimization",
author = "Emiliano Laudadio and Martino Aldrigo and Pierluigi Stipa and Luca Pierantoni and Davide Mencarelli and Mircea Dragoman and Mircea Modreanu",
note = "Publisher Copyright: {\textcopyright} 2022 IEEE.; 2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2022 ; Conference date: 06-07-2022 Through 08-07-2022",
year = "2022",
doi = "10.1109/NEMO51452.2022.10038975",
language = "English",
series = "2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2022",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2022 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization, NEMO 2022",
address = "United States",
}