TY - JOUR
T1 - A flexible, plane-wave based multiband k ·p model
AU - Marquardt, Oliver
AU - Schulz, Stefan
AU - Freysoldt, Christoph
AU - Boeck, Sixten
AU - Hickel, Tilmann
AU - O'Reilly, Eoin P.
AU - Neugebauer, Jörg
PY - 2012/6
Y1 - 2012/6
N2 - In this work, we present a highly generalized implementation of multiband k · p models. We have achieved a high efficiency of our approach by incorporating it in a planewave framework within the Density Functional Theory package S/PHI/nX. To demonstrate the flexibility and applicability of our code, we have chosen two example studies that are directly accessible with the standard eight-band k · p model. By employing a 14-band k · p model for the description of pyramidal InAs/GaAs quantum dots (QDs), we show that this model is able to accomodate for the correct symmetry of the underlying zincblende lattice, which is not reflected in the standard eight-band model. Our second example provides a description of site-controlled (111)-oriented InGaAs/GaAs QDs. The extremely small aspect ratio of these QDs makes a description using conventional k · p Hamiltonians computationally highly expensive.We have therefore rotated the standard eight-band Hamiltonian, to suit the description of these systems. The studies of electronic properties of the above mentioned model systems demonstrate the efficiency and flexibility of our approach.
AB - In this work, we present a highly generalized implementation of multiband k · p models. We have achieved a high efficiency of our approach by incorporating it in a planewave framework within the Density Functional Theory package S/PHI/nX. To demonstrate the flexibility and applicability of our code, we have chosen two example studies that are directly accessible with the standard eight-band k · p model. By employing a 14-band k · p model for the description of pyramidal InAs/GaAs quantum dots (QDs), we show that this model is able to accomodate for the correct symmetry of the underlying zincblende lattice, which is not reflected in the standard eight-band model. Our second example provides a description of site-controlled (111)-oriented InGaAs/GaAs QDs. The extremely small aspect ratio of these QDs makes a description using conventional k · p Hamiltonians computationally highly expensive.We have therefore rotated the standard eight-band Hamiltonian, to suit the description of these systems. The studies of electronic properties of the above mentioned model systems demonstrate the efficiency and flexibility of our approach.
KW - Electronic properties
KW - Multiband k · p formalism
KW - Nanostructures
UR - https://www.scopus.com/pages/publications/84861898995
U2 - 10.1007/s11082-011-9506-3
DO - 10.1007/s11082-011-9506-3
M3 - Article
AN - SCOPUS:84861898995
SN - 0306-8919
VL - 44
SP - 183
EP - 188
JO - Optical and Quantum Electronics
JF - Optical and Quantum Electronics
IS - 3-5
ER -