Abstract
In this work, we present a highly generalized implementation of multiband k · p models. We have achieved a high efficiency of our approach by incorporating it in a planewave framework within the Density Functional Theory package S/PHI/nX. To demonstrate the flexibility and applicability of our code, we have chosen two example studies that are directly accessible with the standard eight-band k · p model. By employing a 14-band k · p model for the description of pyramidal InAs/GaAs quantum dots (QDs), we show that this model is able to accomodate for the correct symmetry of the underlying zincblende lattice, which is not reflected in the standard eight-band model. Our second example provides a description of site-controlled (111)-oriented InGaAs/GaAs QDs. The extremely small aspect ratio of these QDs makes a description using conventional k · p Hamiltonians computationally highly expensive.We have therefore rotated the standard eight-band Hamiltonian, to suit the description of these systems. The studies of electronic properties of the above mentioned model systems demonstrate the efficiency and flexibility of our approach.
| Original language | English |
|---|---|
| Pages (from-to) | 183-188 |
| Number of pages | 6 |
| Journal | Optical and Quantum Electronics |
| Volume | 44 |
| Issue number | 3-5 |
| DOIs | |
| Publication status | Published - Jun 2012 |
Keywords
- Electronic properties
- Multiband k · p formalism
- Nanostructures
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