@inbook{10b75279010544ac82bb9b09a822d2d7,
title = "A fully integrated high efficiency SiGe HBT class F power amplifier at 2.2 GHz",
abstract = "This paper presents a fully integrated high efficiency SiGe HBT class F power amplifier (PA). A maximum on-chip power added efficiency (PAE) of 25 \% has been measured, which at 2.2 GHz and a supply voltage of 1.3 V, is to the forefront of fully integrated HBT class F power amplifier design. The PA is suitable for applications that include DECT and GSM which employ the constant envelope modulation scheme, GMSK. The power amplifier was fabricated using an advanced 0.18 um BiCMOS process [J. Kirchgessner et al., September 2001].",
keywords = "BiCMOS integrated circuits, Consumer electronics, Gallium arsenide, Germanium silicon alloys, Heterojunction bipolar transistors, High power amplifiers, Power amplifiers, Radiofrequency amplifiers, Silicon germanium, Voltage",
author = "O'Sullivan, \{J. A.\} and C. Delabie and McCarthy, \{K. G.\} and A. Murphy and Murphy, \{P. J.\}",
note = "Publisher Copyright: {\textcopyright} 2003 IEEE.; 2003 High Frequency Postgraduate Student Colloquium ; Conference date: 08-09-2003 Through 09-09-2003",
year = "2003",
doi = "10.1109/HFPSC.2003.1242304",
language = "English",
series = "IEEE High Frequency Postgraduate Student Colloquium",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "48--51",
booktitle = "2003 High Frequency Postgraduate Student Colloquium",
address = "United States",
}