@inproceedings{0df90ec09b494ecd8a77521620ddf0b8,
title = "A generalised methodology for oxide leakage current metric",
abstract = "From calculations of semiconductor interface charge, oxide voltage and tunneling currents for MOS systems with equivalent oxide thickness (EOT) in the range of 1 nm, rules are suggested for making it possible to compare leakage quality of different oxides with an accuracy of a factor 2-3 if the EOT is known. The standard procedure suggested gives considerably better accuracy than the commonly used method to determine leakage at VFB+1V for n-type and VFB-1V for p-type substrates.",
author = "O. Engstr{\"o}m and J. Piscator and B. Raeissi and Hurley, \{P. K.\} and K. Cherkaoui and S. Hall and Lemme, \{M. C.\} and Gottlob, \{H. D.B.\}",
year = "2008",
doi = "10.1109/ULIS.2008.4527165",
language = "English",
isbn = "9781424417308",
series = "ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon",
pages = "167--170",
booktitle = "ULIS 2008 - 9th International Conference on ULtimate Integration of Silicon",
note = "9th International Conference on ULtimate Integration of Silicon, ULIS 2008 ; Conference date: 13-03-2008 Through 14-03-2008",
}