A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO<inf>2</inf>/Si RRAMs

Samuel Aldana; Pedro Garcia Fernandez; Rocio Romero-Zaliz; Mireia Bargalló Gonzalez; Francisco Jiménez-Molinos; Francesca Campabadal; Francisco Gómez-Campos; Juan Bautista Roldán Aranda

doi:10.1109/cde.2018.8597010

A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO<inf>2</inf>/Si RRAMs

Samuel Aldana
, Pedro Garcia Fernandez
, Rocio Romero-Zaliz
, Mireia Bargalló Gonzalez
, Francisco Jiménez-Molinos
, Francesca Campabadal
, Francisco Gómez-Campos
, Juan Bautista Roldán Aranda

Research output: Chapter in Book/Report/Conference proceedings › Conference proceeding › peer-review

Abstract

A 3D kinetic Monte Carlo (kMC) simulation tool has been developed to study the resistive switching (RS) processes that allow Ni/HfO2/Si devices to work as non-volatile memories. The simulator is tuned with numerous experimental data and it can reproduce the device current in forming, set and reset processes, the cycle-to-cycle variability and other characteristics linked to the stochasticity of RS operation. The evolution of conductive filaments (CFs) for different RS cycles is analyzed in depth, as well as the filaments density and resistance.

Original language	English
Title of host publication	2018 Spanish Conference on Electron Devices (CDE)
Publisher	IEEE
Pages	1-4
ISBN (Print)	9781538657799
DOIs	https://doi.org/10.1109/cde.2018.8597010
Publication status	Published - 14 Nov 2018
Externally published	Yes

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10.1109/cde.2018.8597010

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Aldana, S., Garcia Fernandez, P., Romero-Zaliz, R., Bargalló Gonzalez, M., Jiménez-Molinos, F., Campabadal, F., Gómez-Campos, F., & Roldán Aranda, J. B. (2018). A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO<inf>2</inf>/Si RRAMs. In 2018 Spanish Conference on Electron Devices (CDE) (pp. 1-4). IEEE. https://doi.org/10.1109/cde.2018.8597010

@inproceedings{c57bbcdc1c994271b2b3c2b9ab8a83db,

title = "A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs",

abstract = "A 3D kinetic Monte Carlo (kMC) simulation tool has been developed to study the resistive switching (RS) processes that allow Ni/HfO2/Si devices to work as non-volatile memories. The simulator is tuned with numerous experimental data and it can reproduce the device current in forming, set and reset processes, the cycle-to-cycle variability and other characteristics linked to the stochasticity of RS operation. The evolution of conductive filaments (CFs) for different RS cycles is analyzed in depth, as well as the filaments density and resistance.",

author = "Samuel Aldana and \{Garcia Fernandez\}, Pedro and Rocio Romero-Zaliz and \{Bargall{\'o} Gonzalez\}, Mireia and Francisco Jim{\'e}nez-Molinos and Francesca Campabadal and Francisco G{\'o}mez-Campos and \{Rold{\'a}n Aranda\}, \{Juan Bautista\}",

year = "2018",

month = nov,

day = "14",

doi = "10.1109/cde.2018.8597010",

language = "English",

isbn = "9781538657799",

pages = "1--4",

booktitle = "2018 Spanish Conference on Electron Devices (CDE)",

publisher = "IEEE",

}

Aldana, S, Garcia Fernandez, P, Romero-Zaliz, R, Bargalló Gonzalez, M, Jiménez-Molinos, F, Campabadal, F, Gómez-Campos, F & Roldán Aranda, JB 2018, A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO<inf>2</inf>/Si RRAMs. in 2018 Spanish Conference on Electron Devices (CDE). IEEE, pp. 1-4. https://doi.org/10.1109/cde.2018.8597010

TY - GEN

T1 - A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO2/Si RRAMs

AU - Aldana, Samuel

AU - Garcia Fernandez, Pedro

AU - Romero-Zaliz, Rocio

AU - Bargalló Gonzalez, Mireia

AU - Jiménez-Molinos, Francisco

AU - Campabadal, Francesca

AU - Gómez-Campos, Francisco

AU - Roldán Aranda, Juan Bautista

PY - 2018/11/14

Y1 - 2018/11/14

N2 - A 3D kinetic Monte Carlo (kMC) simulation tool has been developed to study the resistive switching (RS) processes that allow Ni/HfO2/Si devices to work as non-volatile memories. The simulator is tuned with numerous experimental data and it can reproduce the device current in forming, set and reset processes, the cycle-to-cycle variability and other characteristics linked to the stochasticity of RS operation. The evolution of conductive filaments (CFs) for different RS cycles is analyzed in depth, as well as the filaments density and resistance.

AB - A 3D kinetic Monte Carlo (kMC) simulation tool has been developed to study the resistive switching (RS) processes that allow Ni/HfO2/Si devices to work as non-volatile memories. The simulator is tuned with numerous experimental data and it can reproduce the device current in forming, set and reset processes, the cycle-to-cycle variability and other characteristics linked to the stochasticity of RS operation. The evolution of conductive filaments (CFs) for different RS cycles is analyzed in depth, as well as the filaments density and resistance.

UR - http://dx.doi.org/10.1109/cde.2018.8597010

U2 - 10.1109/cde.2018.8597010

DO - 10.1109/cde.2018.8597010

M3 - Conference proceeding

SN - 9781538657799

SP - 1

EP - 4

BT - 2018 Spanish Conference on Electron Devices (CDE)

PB - IEEE

ER -

A Kinetic Monte Carlo Simulator to Characterize Resistive Switching and Charge Conduction in Ni/HfO<inf>2</inf>/Si RRAMs

Abstract

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