A low-voltage 35-GHz silicon photonic modulator-enabled 112-Gb/s transmission system

Alireza Samani; Mathieu Chagnon; David Patel; Venkat Veerasubramanian; Samir Ghosh; Mohamed Osman; Qiuhang Zhong; David V. Plant

doi:10.1109/JPHOT.2015.2426875

A low-voltage 35-GHz silicon photonic modulator-enabled 112-Gb/s transmission system

Alireza Samani
, Mathieu Chagnon
, David Patel
, Venkat Veerasubramanian
, Samir Ghosh
, Mohamed Osman
, Qiuhang Zhong
, David V. Plant

McGill University

Research output: Contribution to journal › Article › peer-review

Abstract

We present a silicon photonic traveling-wave Mach-Zehnder modulator operating near 1550 nm with a 3-dB bandwidth of 35 GHz. A detailed analysis of traveling-wave electrode impedance, microwave loss, and phase velocity is presented. Small- and large-signal characterization of the device validates the design methodology. We further investigate the performance of the device in a short-reach transmission system. We report a successful 112-Gb/s transmission of four-level pulse amplitude modulation over 5 km of SMF using 2.2 V_p-p drive voltage. Digital signal processing is applied at the transmitter and receiver. 56-GBaud PAM-4 and 64-Gb/s PAM-2 transmission is demonstrated below a pre-FEC hard decision threshold of 4.4 × 10^-3.

Original language	English
Article number	7096918
Journal	IEEE Photonics Journal
Volume	7
Issue number	3
DOIs	https://doi.org/10.1109/JPHOT.2015.2426875
Publication status	Published - 1 Jun 2015
Externally published	Yes

Keywords

electro-optical systems
microwave photonics signal processing
Silicon nanophotonics

Access to Document

10.1109/JPHOT.2015.2426875

Cite this

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title = "A low-voltage 35-GHz silicon photonic modulator-enabled 112-Gb/s transmission system",

abstract = "We present a silicon photonic traveling-wave Mach-Zehnder modulator operating near 1550 nm with a 3-dB bandwidth of 35 GHz. A detailed analysis of traveling-wave electrode impedance, microwave loss, and phase velocity is presented. Small- and large-signal characterization of the device validates the design methodology. We further investigate the performance of the device in a short-reach transmission system. We report a successful 112-Gb/s transmission of four-level pulse amplitude modulation over 5 km of SMF using 2.2 Vp-p drive voltage. Digital signal processing is applied at the transmitter and receiver. 56-GBaud PAM-4 and 64-Gb/s PAM-2 transmission is demonstrated below a pre-FEC hard decision threshold of 4.4 × 10-3.",

keywords = "electro-optical systems, microwave photonics signal processing, Silicon nanophotonics",

author = "Alireza Samani and Mathieu Chagnon and David Patel and Venkat Veerasubramanian and Samir Ghosh and Mohamed Osman and Qiuhang Zhong and Plant, \{David V.\}",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.",

year = "2015",

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doi = "10.1109/JPHOT.2015.2426875",

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T1 - A low-voltage 35-GHz silicon photonic modulator-enabled 112-Gb/s transmission system

AU - Samani, Alireza

AU - Chagnon, Mathieu

AU - Patel, David

AU - Veerasubramanian, Venkat

AU - Ghosh, Samir

AU - Osman, Mohamed

AU - Zhong, Qiuhang

AU - Plant, David V.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - We present a silicon photonic traveling-wave Mach-Zehnder modulator operating near 1550 nm with a 3-dB bandwidth of 35 GHz. A detailed analysis of traveling-wave electrode impedance, microwave loss, and phase velocity is presented. Small- and large-signal characterization of the device validates the design methodology. We further investigate the performance of the device in a short-reach transmission system. We report a successful 112-Gb/s transmission of four-level pulse amplitude modulation over 5 km of SMF using 2.2 Vp-p drive voltage. Digital signal processing is applied at the transmitter and receiver. 56-GBaud PAM-4 and 64-Gb/s PAM-2 transmission is demonstrated below a pre-FEC hard decision threshold of 4.4 × 10-3.

AB - We present a silicon photonic traveling-wave Mach-Zehnder modulator operating near 1550 nm with a 3-dB bandwidth of 35 GHz. A detailed analysis of traveling-wave electrode impedance, microwave loss, and phase velocity is presented. Small- and large-signal characterization of the device validates the design methodology. We further investigate the performance of the device in a short-reach transmission system. We report a successful 112-Gb/s transmission of four-level pulse amplitude modulation over 5 km of SMF using 2.2 Vp-p drive voltage. Digital signal processing is applied at the transmitter and receiver. 56-GBaud PAM-4 and 64-Gb/s PAM-2 transmission is demonstrated below a pre-FEC hard decision threshold of 4.4 × 10-3.

KW - electro-optical systems

KW - microwave photonics signal processing

KW - Silicon nanophotonics

UR - https://www.scopus.com/pages/publications/84929192754

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DO - 10.1109/JPHOT.2015.2426875

M3 - Article

AN - SCOPUS:84929192754

SN - 1943-0655

VL - 7

JO - IEEE Photonics Journal

JF - IEEE Photonics Journal

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M1 - 7096918

ER -

A low-voltage 35-GHz silicon photonic modulator-enabled 112-Gb/s transmission system

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Keywords

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