Abstract
Dark count non-linearity in CMOS compatible, single photon counting, Geiger-mode avalanche photodiodes (GM-APD) has been investigated. A novel structure was designed, fabricated, and characterized to allow dark count optimization. Dark count levels for the proposed structure are shown to scale linearly with area.
| Original language | English |
|---|---|
| Pages (from-to) | 797-800 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| Publication status | Published - 2002 |
| Event | 2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States Duration: 8 Dec 2002 → 11 Dec 2002 |