Abstract
A novel widely tunable laser diode is proposed and demonstrated. Mode selection occurs by etching perturbing slots into the laser ridge. A two-section device is realized with different slot patterns in each section allowing Vernier tuning. The laser operates at 1.3 μm and achieves a maximum output power of 10 mW. A discontinuous tuning range of 30 nm was achieved with a side mode suppression greater than 30 dB. Wavelength switching times of approximately 1.5 ns between a number of wavelength channels separated by 7 nm have been demonstrated.
| Original language | English |
|---|---|
| Pages (from-to) | 331-337 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 44 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2008 |
Keywords
- Fast wavelength switching
- Semiconductor laser diode
- Vernier effect
- Widely tunable laser
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