A resonant high side gate driver for low voltage applications

  • Patrick Dwane
  • , Dara O'Sullivan
  • , Michael G. Egan

Research output: Chapter in Book/Report/Conference proceedingsConference proceedingpeer-review

Abstract

This paper aims to provide a practical insight into the use of a novel resonant gate drive system to efficiently drive both the power switches in a switched mode power supply, without the requirement for level shifting or bootstrapping circuitry. At present there are two popular methods to drive high side N-channel devices in low voltage applications. The circuit presented here overcomes the limitations of these solutions without a part number proliferation. The theoretical characteristics of the topology are examined in a detailed mathematical analysis suite. Simulation and experimental results emphasize the advantages of the proposed topology.

Original languageEnglish
Title of host publication36th IEEE Power Electronics Specialists Conference 2005
Pages1979-1985
Number of pages7
DOIs
Publication statusPublished - 2005

Publication series

NamePESC Record - IEEE Annual Power Electronics Specialists Conference
Volume2005
ISSN (Print)0275-9306

Keywords

  • dc-dc conversion
  • High frequency
  • Resonant gate drive

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