A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs(001)

S. R. Armstrong; R. D. Hoare; M. E. Pemble; I. M. Povey; A. Stafford; A. G. Taylor; B. A. Joyce; J. H. Neave; D. R. Klug; J. Zhang

doi:10.1016/0039-6028(92)90530-J

A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs(001)

S. R. Armstrong
, R. D. Hoare
, M. E. Pemble
, I. M. Povey
, A. Stafford
, A. G. Taylor
, B. A. Joyce
, J. H. Neave
, D. R. Klug
, J. Zhang

Research output: Contribution to journal › Article › peer-review

Abstract

MBE growth of GaAs, AlAs and InAs on GaAs(001) has been monitored in real time, using simultaneous reflection high-energy electron diffraction (RHEED) and reflection anisotropy (RA) measurements, the RA measurements all being made with a fixed wavelength laser source operating at 647 nm. For the growth of GaAs and AlAs on GaAs(100), RA oscillations which occurred during the bilayer growth are explained in terms of the variation in the anisotropic distribution of surface "dimer" bonds during the growth process. RA data obtained during the growth of InAs/GaAs heterostructures are presented and discussed in relation to the influence of surface roughening upon both the RA and RHEED measurements.

Original language	English
Pages (from-to)	263-269
Number of pages	7
Journal	Surface Science
Volume	274
Issue number	2
DOIs	https://doi.org/10.1016/0039-6028(92)90530-J
Publication status	Published - 1 Aug 1992
Externally published	Yes

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10.1016/0039-6028(92)90530-J

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title = "A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs(001)",

abstract = "MBE growth of GaAs, AlAs and InAs on GaAs(001) has been monitored in real time, using simultaneous reflection high-energy electron diffraction (RHEED) and reflection anisotropy (RA) measurements, the RA measurements all being made with a fixed wavelength laser source operating at 647 nm. For the growth of GaAs and AlAs on GaAs(100), RA oscillations which occurred during the bilayer growth are explained in terms of the variation in the anisotropic distribution of surface {"}dimer{"} bonds during the growth process. RA data obtained during the growth of InAs/GaAs heterostructures are presented and discussed in relation to the influence of surface roughening upon both the RA and RHEED measurements.",

author = "Armstrong, \{S. R.\} and Hoare, \{R. D.\} and Pemble, \{M. E.\} and Povey, \{I. M.\} and A. Stafford and Taylor, \{A. G.\} and Joyce, \{B. A.\} and Neave, \{J. H.\} and Klug, \{D. R.\} and J. Zhang",

year = "1992",

month = aug,

day = "1",

doi = "10.1016/0039-6028(92)90530-J",

language = "English",

volume = "274",

pages = "263--269",

journal = "Surface Science",

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TY - JOUR

T1 - A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs(001)

AU - Armstrong, S. R.

AU - Hoare, R. D.

AU - Pemble, M. E.

AU - Povey, I. M.

AU - Stafford, A.

AU - Taylor, A. G.

AU - Joyce, B. A.

AU - Neave, J. H.

AU - Klug, D. R.

AU - Zhang, J.

PY - 1992/8/1

Y1 - 1992/8/1

N2 - MBE growth of GaAs, AlAs and InAs on GaAs(001) has been monitored in real time, using simultaneous reflection high-energy electron diffraction (RHEED) and reflection anisotropy (RA) measurements, the RA measurements all being made with a fixed wavelength laser source operating at 647 nm. For the growth of GaAs and AlAs on GaAs(100), RA oscillations which occurred during the bilayer growth are explained in terms of the variation in the anisotropic distribution of surface "dimer" bonds during the growth process. RA data obtained during the growth of InAs/GaAs heterostructures are presented and discussed in relation to the influence of surface roughening upon both the RA and RHEED measurements.

AB - MBE growth of GaAs, AlAs and InAs on GaAs(001) has been monitored in real time, using simultaneous reflection high-energy electron diffraction (RHEED) and reflection anisotropy (RA) measurements, the RA measurements all being made with a fixed wavelength laser source operating at 647 nm. For the growth of GaAs and AlAs on GaAs(100), RA oscillations which occurred during the bilayer growth are explained in terms of the variation in the anisotropic distribution of surface "dimer" bonds during the growth process. RA data obtained during the growth of InAs/GaAs heterostructures are presented and discussed in relation to the influence of surface roughening upon both the RA and RHEED measurements.

UR - https://www.scopus.com/pages/publications/0026900661

U2 - 10.1016/0039-6028(92)90530-J

DO - 10.1016/0039-6028(92)90530-J

M3 - Article

AN - SCOPUS:0026900661

SN - 0039-6028

VL - 274

SP - 263

EP - 269

JO - Surface Science

JF - Surface Science

IS - 2

ER -

A RHEED and reflectance anisotropy study of the MBE growth of GaAs, AlAs and InAs on GaAs(001)

Abstract

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