@inbook{375dab0dd5b34e0db84cf020208861c2,
title = "A SiGe HBT variable gain amplifier with 80 dB control range for applications up to 3 GHz",
abstract = "A variable gain amplifier suitable for wideband applications (up to 3 GHz) has been designed and fabricated in a SiGe BiCMOS process with fT = 49 GHz. Variable gain is achieved with a current steering differential cascode cell. The amplifier has a linear-in-dB gain range of 82 dB at 1.85 GHz and 65 dB at 2.5 GHz, which is the largest control range reported to date. The amplifier has a maximum gain of 18.5 dB, an OIP3 of 7.4 dBm, and a noise figure of 7.5 dB. The chip size is 1258 μm * 1209 μm, and it consumes 39 mA from a 3 V supply. The wideband nature of the VGA makes it suitable for integrated applications incorporating both cellular phone and wireless LAN functionality.",
author = "Niall Byrne and Murphy, \{Patrick J.\} and McCarthy, \{Kevin G.\} and Brendan Foley",
year = "2004",
language = "English",
isbn = "1580539912",
series = "Conference Proceedings - 7th European Conference on Wireless Technology, ECWT2004",
pages = "193--196",
booktitle = "Conference Proceedings - 7th European Conference on Wireless Technology, ECWT2004",
note = "Conference Proceedings - 7th European Conference on Wireless Technology, ECWT2004 ; Conference date: 11-10-2004 Through 12-10-2004",
}