TY - GEN
T1 - A SiGe HBT variable gain amplifier with 80 dB control range for applications up to 3 GHz
AU - Byrne, Niall
AU - Murphy, Patrick J.
AU - McCarthy, Kevin G.
AU - Foley, Brendan
PY - 2004
Y1 - 2004
N2 - A variable gain amplifier suitable for wideband applications (up to 3 GHz) has been designed and fabricated in a SiGe BiCMOS process with fT = 49 GHz. Variable gain is achieved with a current steering differential cascode cell. The amplifier has a linear-in-dB gain range of 82 dB at 1.85 GHz and 65 dB at 2.5 GHz, which is the largest control range reported to date. The amplifier has a maximum gain of 18.5 dB, an OIP3 of 7.4 dBm, and a noise figure of 7.5 dB. The chip size is 1258 μm * 1209 μm, and it consumes 39 mA from a 3 V supply. The wideband nature of the VGA makes it suitable for integrated applications incorporating both cellular phone and wireless LAN functionality.
AB - A variable gain amplifier suitable for wideband applications (up to 3 GHz) has been designed and fabricated in a SiGe BiCMOS process with fT = 49 GHz. Variable gain is achieved with a current steering differential cascode cell. The amplifier has a linear-in-dB gain range of 82 dB at 1.85 GHz and 65 dB at 2.5 GHz, which is the largest control range reported to date. The amplifier has a maximum gain of 18.5 dB, an OIP3 of 7.4 dBm, and a noise figure of 7.5 dB. The chip size is 1258 μm * 1209 μm, and it consumes 39 mA from a 3 V supply. The wideband nature of the VGA makes it suitable for integrated applications incorporating both cellular phone and wireless LAN functionality.
UR - https://www.scopus.com/pages/publications/19644387988
M3 - Conference proceeding
AN - SCOPUS:19644387988
SN - 1580539912
T3 - Conference Proceedings - 7th European Conference on Wireless Technology, ECWT2004
SP - 193
EP - 196
BT - Conference Proceedings - 7th European Conference on Wireless Technology, ECWT2004
T2 - Conference Proceedings - 7th European Conference on Wireless Technology, ECWT2004
Y2 - 11 October 2004 through 12 October 2004
ER -