@inbook{8785347e730f4e90b680592e9b0a5182,
title = "A study of capacitance-voltage hysteresis in HfO2/InGaAs metal-oxide-semiconductor systems",
abstract = "In this work, we performed a study of capacitance-voltage (C-V) hysteresis in HfO2/InGaAs metal-oxide-semiconductor (MOS) systems. C-V hysteresis measurement with a stress time in accumulation has been used in this investigation. Charge trapping density estimated from C-V hysteresis at all stress times is comparable to or even greater than the interface state density in Hf02/InGaAs MOS systems, indicating that C-V hysteresis is an important problem to resolve. C-V hysteresis is observed to increase with a power law dependence on the increasing stress time in accumulation. The majority of the charge trapping is a reversible behaviour in the case of the n-InGaAs, but there is a significant permanent trapping component in the p-InGaAs sample. Based on an oxide thickness series, it is demonstrated that C-V hysteresis increases linearly with the increasing oxide thickness with the charge trapping density being a constant value for all thicknesses, indicating that the trapping is predominately localised in a plane (in cm-2) near/at the HfO2/InGaAs interfacial oxide transition layer.",
keywords = "C-V hysteresis, Charge trapping, HfO, InGaAs, MOS, Power law dependence, Stress",
author = "Jun Lin and Scott Monaghan and Karim Cherkaoui and Povey, \{Ian M.\} and Eamon O'Connor and Brendan Sheehan and Hurley, \{Paul K.\}",
note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014 ; Conference date: 12-10-2014 Through 16-10-2014",
year = "2014",
doi = "10.1109/IIRW.2014.7049503",
language = "English",
series = "IEEE International Integrated Reliability Workshop Final Report",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "36--40",
booktitle = "2014 IEEE International Integrated Reliability Workshop Final Report, IIRW 2014",
address = "United States",
}