A study of capacitance-voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Microelectronic Engineering
DOIs	https://doi.org/10.1016/J.MEE.2015.04.108
Publication status	Published - 2015

Access to Document

@article{907cd16337244ae688d22deb68658ace,

title = "A study of capacitance-voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system",

author = "Jun Lin and Scott Monaghan and Karim Cherkaoui and Ian Povey and Eamon O'Connor and Brendan Sheehan and Paul Hurley",

year = "2015",

doi = "10.1016/J.MEE.2015.04.108",

language = "Undefined/Unknown",

journal = "Microelectronic Engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - A study of capacitance-voltage hysteresis in the HfO2/InGaAs metal-oxide-semiconductor system

AU - Lin, Jun

AU - Monaghan, Scott

AU - Cherkaoui, Karim

AU - Povey, Ian

AU - O'Connor, Eamon

AU - Sheehan, Brendan

AU - Hurley, Paul

PY - 2015

Y1 - 2015

UR - https://publons.com/wos-op/publon/9241530/

U2 - 10.1016/J.MEE.2015.04.108

DO - 10.1016/J.MEE.2015.04.108

M3 - Article

SN - 0167-9317

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -