TY - GEN
T1 - A study of interfacial defects in HfO2, LA2O 3, and GD2O3 thin films on silicon substrates
AU - Hurley, P. K.
AU - Cherkaoui, K.
AU - O'Connor, E.
AU - Hall, S.
AU - Lu, Y.
AU - Buiu, O.
AU - Lemme, M. C.
AU - Gottlob, H. D.B.
AU - Schmidt, M.
AU - Raeissi, B.
AU - Piscator, J.
AU - Engstrom, O.
PY - 2006
Y1 - 2006
N2 - The characterisation, origin and passivation of electrically active interface and bulk defects present in high dielectric constant (high-k) thin films represents one of the major scientific and technological challenges associated with the integration of these films into silicon MOSFETs. In this work, we present experimental results which examine relatively high (>1×1011cm-2) electrically active interface defects which are commonly observed in (100)Si/SiOx/highk/metal gate systems during high-k process development. This paper will extend previous studies on the (100)Si/SiOx/HfO2 system to include a comparative analysis of the density and energy distribution of interface defects for HfO2, La2O3 and Gd2O 3 thin films on (100) orientation silicon formed by a range of deposition techniques. The analysis of the interface defect density across the energy gap, for samples which experience no H2/N2 or N2 annealing following the gate stack formation, reveal a peak density ∼1×1012cm-2eV-1 to ∼1×1013cm-2 eV-1) at 0.83 to 0.92eV above the silicon valence band edge for the HfO2, La 2O3 and Gd2O3 thin films on (100)Si, suggesting a common origin of silicon dangling bond (Pbo) centres for the dominant interface defects for the various (100)Si/SiO x/high-k/metal gate systems.
AB - The characterisation, origin and passivation of electrically active interface and bulk defects present in high dielectric constant (high-k) thin films represents one of the major scientific and technological challenges associated with the integration of these films into silicon MOSFETs. In this work, we present experimental results which examine relatively high (>1×1011cm-2) electrically active interface defects which are commonly observed in (100)Si/SiOx/highk/metal gate systems during high-k process development. This paper will extend previous studies on the (100)Si/SiOx/HfO2 system to include a comparative analysis of the density and energy distribution of interface defects for HfO2, La2O3 and Gd2O 3 thin films on (100) orientation silicon formed by a range of deposition techniques. The analysis of the interface defect density across the energy gap, for samples which experience no H2/N2 or N2 annealing following the gate stack formation, reveal a peak density ∼1×1012cm-2eV-1 to ∼1×1013cm-2 eV-1) at 0.83 to 0.92eV above the silicon valence band edge for the HfO2, La 2O3 and Gd2O3 thin films on (100)Si, suggesting a common origin of silicon dangling bond (Pbo) centres for the dominant interface defects for the various (100)Si/SiO x/high-k/metal gate systems.
UR - https://www.scopus.com/pages/publications/58649106902
M3 - Conference proceeding
AN - SCOPUS:58649106902
SN - 9889884445
SN - 9789889884444
T3 - Semiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology
SP - 389
EP - 401
BT - Semiconductor Technology, ISTC2007 - Proceedings of the 6th International Conference on Semiconductor Technology
PB - Electrochemical Society
T2 - 6th International Conference on Semiconductor Technology, ISTC2007
Y2 - 18 March 2007 through 20 March 2007
ER -