Abstract
We present the results of a study of nitrogen incorporation in metalorganic-vapour-phase epitaxy-grown sitecontrolled quantum dots (QDs). We report for the first time on a significant incorporation (approximately 0.3%), producing a noteworthy red shift (at least 50 meV) in some of our samples. Depending on the level of nitrogen incorporation/exposure, strong modifications of the optical features are found (variable distribution of the emission homogeneity, fine-structure splitting, few-particle effects). We discuss our results, especially in relation to a specific reproducible sample which has noticeable features: the usual pattern of the excitonic transitions is altered and the fine-structure splitting is suppressed to vanishing values. Distinctively, nitrogen incorporation can be achieved without detriment to the optical quality, as confirmed by narrow linewidths and photon correlation spectroscopy.
| Original language | English |
|---|---|
| Article number | 567 |
| Pages (from-to) | 1-7 |
| Number of pages | 7 |
| Journal | Nanoscale Research Letters |
| Volume | 6 |
| DOIs | |
| Publication status | Published - 2011 |
Keywords
- Dilute nitride semiconductors
- MOVPE
- Site-controlled quantum dots
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