A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers

É O'Connor; B Brennan; V Djara; K Cherkaoui; S Monaghan

A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers

É O'Connor
, B Brennan
, V Djara
, K Cherkaoui
, S Monaghan

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	J. Appl. Phys.
Publication status	Published - 2011

Cite this

O'Connor, É., Brennan, B., Djara, V., Cherkaoui, K., & Monaghan, S. (2011). A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers. J. Appl. Phys.

O'Connor, É ; Brennan, B ; Djara, V et al. / A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers. In: J. Appl. Phys. 2011.

@article{c9a18599d5184b2bb1327bf656a5d2a3,

title = "A systematic study of (\$ hbox \$\{\$NH\$\}\$ \_ \$\{\$4\$\}\$ \$) 2S passivation (22\% 10\% 5\% or 1\%) on the interface properties of the \$ hbox \$\{\$Al\$\}\$ \_ \$\{\$2\$\}\$ hbox \$\{\$O\$\}\$ \_ \$\{\$3\$\}\$/hbox \$\{\$In\$\}\$ \_ \$\{\$0.53\$\}\$ hbox \$\{\$Ga\$\}\$ \_ \$\{\$0.47\$\}\$ hbox \$\{\$As\$\}\$/hbox \$\{\$InP\$\}\$ \$ system for \$ n \$-type and \$ p \$-type In0. 53Ga0. 47As epitaxial layers",

author = "{\'E} O'Connor and B Brennan and V Djara and K Cherkaoui and S Monaghan",

year = "2011",

language = "Undefined/Unknown",

journal = "J. Appl. Phys.",

}

O'Connor, É, Brennan, B, Djara, V, Cherkaoui, K & Monaghan, S 2011, 'A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers', J. Appl. Phys.

A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers. / O'Connor, É; Brennan, B; Djara, V et al.
In: J. Appl. Phys., 2011.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers

AU - O'Connor, É

AU - Brennan, B

AU - Djara, V

AU - Cherkaoui, K

AU - Monaghan, S

PY - 2011

Y1 - 2011

M3 - Article

JO - J. Appl. Phys.

JF - J. Appl. Phys.

ER -

O'Connor É, Brennan B, Djara V, Cherkaoui K , Monaghan S. A systematic study of ($ hbox ${$NH$}$ _ ${$4$}$ $) 2S passivation (22% 10% 5% or 1%) on the interface properties of the $ hbox ${$Al$}$ _ ${$2$}$ hbox ${$O$}$ _ ${$3$}$/hbox ${$In$}$ _ ${$0.53$}$ hbox ${$Ga$}$ _ ${$0.47$}$ hbox ${$As$}$/hbox ${$InP$}$ $ system for $ n $-type and $ p $-type In0. 53Ga0. 47As epitaxial layers. J. Appl. Phys. 2011.