A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers

Ailbe O'Manachain

doi:10.1063/1.3533959

A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers

Ailbe O'Manachain

Tyndall MicroNano Systems

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Journal	Journal of Applied Physics
DOIs	https://doi.org/10.1063/1.3533959
Publication status	Published - 2011

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10.1063/1.3533959

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title = "A systematic study of (NH 4) 2 S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers",

author = "Ailbe O'Manachain",

year = "2011",

doi = "10.1063/1.3533959",

language = "Undefined/Unknown",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - A systematic study of (NH 4) 2 S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers

AU - O'Manachain, Ailbe

PY - 2011

Y1 - 2011

U2 - 10.1063/1.3533959

DO - 10.1063/1.3533959

M3 - Article

SN - 0021-8979

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -