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A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As epitaxial layers

  • Éamon O’Connor
  • , B Brennan
  • , Vladimir Djara
  • , Karim Cherkaoui
  • , Scott Monaghan
  • , Simon B Newcomb
  • , R Contreras
  • , M Milojevic
  • , Gregory Hughes
  • , Martyn E Pemble
  • , others

Research output: Contribution to journalArticlepeer-review

Original languageUndefined/Unknown
JournalJournal of Applied Physics
Publication statusPublished - 2011

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