Absorber and gain dynamics in dilute nitride mode-locked lasers

  • Jiri Thoma
  • , Tomasz Ochalski
  • , Tomas Z. Piwonski
  • , Stephen P. Hegarty
  • , Guillaume Huyet
  • , Kimmo Haring
  • , Janne Puustinen
  • , Mircea Guina

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

We report a comparison between the high-speed gain and absorber dynamics of dilute nitride laser structures utilising GaAs or GaAsN barrier layers. The inclusion of dilute nitride barriers greatly reduces the absorber recovery time. The wafers were processed into two-section monolithic mode-bcked lasers generating 2-5 ps pulses at 40 GHz.

Original languageEnglish
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
PublisherAssociation for Computing Machinery
ISBN (Print)9781557528902
DOIs
Publication statusPublished - 2010
EventConference on Lasers and Electro-Optics, CLEO 2010 - San Jose, CA, United States
Duration: 16 May 201021 May 2010

Publication series

NameLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2010
Country/TerritoryUnited States
CitySan Jose, CA
Period16/05/1021/05/10

Fingerprint

Dive into the research topics of 'Absorber and gain dynamics in dilute nitride mode-locked lasers'. Together they form a unique fingerprint.

Cite this