Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors

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@article{ea864efd24124734811867fa93ef417e,

title = "Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors",

author = "Badal Mondal and Marcel Kr{\"o}ner and Thilo Hepp and Kerstin Volz and Ralf Tonner-Zech",

year = "2023",

month = jul,

day = "7",

doi = "10.1103/PhysRevB.108.035202",

language = "English",

journal = "Physical Review B",

issn = "2469-9950",

publisher = "American Physical Society",

}

TY - JOUR

T1 - Accurate first principles band gap predictions in strain engineered ternary III-V semiconductors

AU - Mondal, Badal

AU - Kröner, Marcel

AU - Hepp, Thilo

AU - Volz, Kerstin

AU - Tonner-Zech, Ralf

PY - 2023/7/7

Y1 - 2023/7/7

UR - https://doi.org/10.1103/PhysRevB.108.035202

U2 - 10.1103/PhysRevB.108.035202

DO - 10.1103/PhysRevB.108.035202

M3 - Article

SN - 2469-9950

JO - Physical Review B

JF - Physical Review B

ER -