@inproceedings{17d4d75a1257452face97a9853e98802,
title = "Advanced channel materials for the semiconductor industry",
abstract = "In this work, we will review the current progress in integration and device design of high mobility devices. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed.",
keywords = "(Si)Ge, high mobility materials, III-V, scaling",
author = "N. Collaert and A. Alian and H. Arimura and G. Boccardi and G. Eneman and D. Lin and J. Mitard and S. Sioncke and N. Waldron and L. Witters and X. Zhou and Thean, \{A. V.Y.\}",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015 ; Conference date: 05-10-2015 Through 08-10-2015",
year = "2015",
month = nov,
day = "20",
doi = "10.1109/S3S.2015.7333542",
language = "English",
series = "2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2015",
address = "United States",
}