@inproceedings{8d150153c2644255945cb3bec4af77e1,
title = "Advanced FinFET devices for sub-32nm technology nodes: Characteristics and integration challenges",
abstract = "We report a comprehensive evaluation and overview of the latest developments and technology challenges of FinFET-based devices. They offer improved electrostatics and steeper sub-threshold slopes, attractive for enabling further CMOS scaling, but can also suffer from higher parasitic resistance and parasitic capacitance for narrow Fin devices. Critical solutions to minimize the impact of the latter are here addressed, demonstrating their viability for replacing planar CMOS devices. Multiple-VT CMOS can be achieved with capping technology, with aggressively scaled Ring Oscillators (RO) and SRAM cells showing excellent performance and matching behavior.",
author = "A. Veloso and N. Collaert and \{De Keersgieter\}, A. and L. Witters and R. Rooyackers and \{Van Dal\}, \{M. J.H.\} and R. Duffy and Pawlak, \{B. J.\} and Lander, \{R. J.P.\} and T. Hoffmann and S. Biesemans and M. Jurczak",
year = "2009",
doi = "10.1149/1.3117391",
language = "English",
isbn = "9781566777124",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "4",
pages = "45--54",
booktitle = "ECS Transactions - Silicon-on-Insulator Technology and Devices 14 - 215th Meeting of the Electrochemical Society",
address = "United States",
edition = "4",
note = "14th International Symposium on Silicon-On-Insulator Technology and Devices - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}