@inproceedings{a6e5e7cb2b2c4926b275176b0b2acfb3,
title = "Advanced numerical modelling of non-volatile memory cells",
abstract = "The floating gate voltage of a non-volatile memory cell cannot be accessed directly from measurements but can be simulated using numerical techniques. This allows numerical simulations to provide a benchmark for coupling ratio measurement methodologies. Various coupling ratio methodologies from literature are examined and guidelines to improving the application of these methods to non-volatile memory cells are outlined. The dependence of the coupling ratios on applied terminal voltages is investigated. In addition, the effect of floating gate polysilicon doping on device performance is estimated using numerical simulation techniques. This work demonstrates the role of advanced numerical simulation in supplementing the electrical characterization of non-volatile memory cells.",
author = "R. Duane and A. Concannon and P. O'Sullivan and A. Mathewson",
year = "1998",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "304--307",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
address = "United States",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",
}