Advanced process development using numerical simulation

Research output: Contribution to journalArticlepeer-review

Abstract

In 1993 the flash EEPROM share of the memory market increased by 73%, establishing it as the fastest growing segment of the non-volatile memory market [1]. The aim of this work is to develop and integrate a flash EEPROM memory module into an existing CMOS process without compromising its performance. A design methodology is presented which demonstrates the use of numerical simulation in the evaluation of different process options, before committing the design to silicon.

Original languageEnglish
Pages (from-to)14/1-14/6
JournalIEE Colloquium (Digest)
Issue number33
Publication statusPublished - 1995
EventIEE Electronics Division Colloquium on Advanced MOS and BI-Polar Devices - London, UK
Duration: 14 Feb 199514 Feb 1995

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