Advanced semiconductor devices for future CMOS technologies

  • C. Claeys
  • , D. Chiappe
  • , N. Collaert
  • , J. Mitard
  • , I. Radu
  • , R. Rooyackers
  • , E. Simoen
  • , A. Vandooren
  • , A. Veloso
  • , N. Waldron
  • , L. Witters
  • , A. Thean

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

Device scaling for higher performance and lower power consumption requires the introduction of advanced process modules, new materials new device architectures and finally even the use of alternative device operation principles compared to the standard MOS transistor. Several of these advanced devices will be discussed in view of their scalability and their potential for coping with the ITRS roadmap. Key performance parameters will be investigated.

Original languageEnglish
Title of host publicationAdvanced CMOS-Compatible Semiconductor Devices 17
EditorsY. Omura, J. A. Martino, J. P. Raskin, S. Selberherr, H. Ishii, F. Gamiz, B. Y. Nguyen
PublisherElectrochemical Society Inc.
Pages49-60
Number of pages12
Edition5
ISBN (Electronic)9781607685951
DOIs
Publication statusPublished - 2015
Externally publishedYes
EventSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting - Chicago, United States
Duration: 24 May 201528 May 2015

Publication series

NameECS Transactions
Number5
Volume66
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Advanced CMOS-Compatible Semiconductor Devices 17 - 227th ECS Meeting
Country/TerritoryUnited States
CityChicago
Period24/05/1528/05/15

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