Advanced test structure design for dielectric characterisation of novel high-K materials

Research output: Chapter in Book/Report/Conference proceedingsChapterpeer-review

Abstract

The extremely high level of integration currently required within the wireless industry poses significant challenges at all technology steps from materials through processing to packaging. Capacitor design is a very important element of this technology integration challenge. Recently there has been strong interest in the use of PMNT (Pb(Mg,Nb)TiO3) as a thin-film layer in semiconductor processes [1]. The high dielectric constant of PMNT makes it an attractive material for the fabrication of MIM (Metal/Insulator/Metal) decoupling capacitors. Before PMNT can be used in conjunction with a modern Si process for capacitor design the PMNT layer must be accurately characterised. This paper addresses the issue of thin-film characterisation through wafer-probe measurements and electromagnetic simulation (EM) of coplanar waveguides. Based on the results obtained a design methodology for optimum test structure layout is presented.

Original languageEnglish
Title of host publication2008 IEEE Conference on Microelectronic Test Structures, ICMTS
Pages180-184
Number of pages5
DOIs
Publication statusPublished - 2008
Event2008 IEEE Conference on Microelectronic Test Structures, ICMTS - Edinburgh, United Kingdom
Duration: 24 Mar 200827 Mar 2008

Publication series

NameIEEE International Conference on Microelectronic Test Structures

Conference

Conference2008 IEEE Conference on Microelectronic Test Structures, ICMTS
Country/TerritoryUnited Kingdom
CityEdinburgh
Period24/03/0827/03/08

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