Advanced transistors for high frequency applications

Bertrand Parvais; Uthayasankaran Peralagu; Abhitosh Vais; Alireza Alian; Liesbet Witters; Yves Mols; Amey Walke; Mark Ingels; Hao Yu; Vamsi Putcha; Ahmad Khaled; Raul Rodriguez; Arturo Sibaja-Hernandez; Sachin Yadav; Rana Elkashlan; Marina Baryshnikova; Geert Mannaert; Reynald Alcotte; Bernardette Kunert; Eddy Simoen; Ellen Zhao; Brice De Jaeger; Daniel Fleetwood; Robert Langer; Ming Zhao; Piet Wambacq; Niamh Waldron; Nadine Collaert

doi:10.1149/09705.0027ecst

Advanced transistors for high frequency applications

Bertrand Parvais
, Uthayasankaran Peralagu
, Abhitosh Vais
, Alireza Alian
, Liesbet Witters
, Yves Mols
, Amey Walke
, Mark Ingels
, Hao Yu
, Vamsi Putcha
, Ahmad Khaled
, Raul Rodriguez
, Arturo Sibaja-Hernandez
, Sachin Yadav
, Rana Elkashlan
, Marina Baryshnikova
, Geert Mannaert
, Reynald Alcotte
, Bernardette Kunert
, Eddy Simoen

Ellen Zhao, Brice De Jaeger, Daniel Fleetwood, Robert Langer, Ming Zhao, Piet Wambacq, Niamh Waldron, Nadine Collaert

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Downscaling CMOS technology has allowed the integration of high-speed transceivers on silicon chips, but high-power amplifiers rely on III-V technologies to deliver the power and efficiency levels required by modern radios. In this work, we explore two routes to enable the fabrication of compound semiconductor devices on a large-scale manufacturable Si platform. In the first route, we report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools. In the second route, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate using Nano-Ridge Engineering (NRE) combined with aspect ratio trapping (ART). We provide insight on the potential of these new technologies for the design of advanced front-end modules, including performance trade-offs, modelling and reliability challenges.

Original language	English
Title of host publication	237th ECS Meeting
Subtitle of host publication	Advanced CMOS-Compatible Semiconductor Devices 19
Editors	J. Martino, B.-Y. Nguyen, F. J. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, E. Simoen
Publisher	IOP Publishing Ltd.
Pages	27-38
Number of pages	12
Edition	5
ISBN (Electronic)	9781607688938
DOIs	https://doi.org/10.1149/09705.0027ecst
Publication status	Published - 1 Apr 2020
Externally published	Yes
Event	237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 - Montreal, Canada Duration: 10 May 2020 → 14 May 2020

Publication series

Name	ECS Transactions
Number	5
Volume	97
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020
Country/Territory	Canada
City	Montreal
Period	10/05/20 → 14/05/20

Access to Document

10.1149/09705.0027ecst

Cite this

Parvais, B., Peralagu, U., Vais, A., Alian, A., Witters, L., Mols, Y., Walke, A., Ingels, M., Yu, H., Putcha, V., Khaled, A., Rodriguez, R., Sibaja-Hernandez, A., Yadav, S., Elkashlan, R., Baryshnikova, M., Mannaert, G., Alcotte, R., Kunert, B., ... Collaert, N. (2020). Advanced transistors for high frequency applications. In J. Martino, B.-Y. Nguyen, F. J. Gamiz, H. Ishii, J.-P. Raskin, S. Selberherr, & E. Simoen (Eds.), 237th ECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 19 (5 ed., pp. 27-38). (ECS Transactions; Vol. 97, No. 5). IOP Publishing Ltd.. https://doi.org/10.1149/09705.0027ecst

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title = "Advanced transistors for high frequency applications",

abstract = "Downscaling CMOS technology has allowed the integration of high-speed transceivers on silicon chips, but high-power amplifiers rely on III-V technologies to deliver the power and efficiency levels required by modern radios. In this work, we explore two routes to enable the fabrication of compound semiconductor devices on a large-scale manufacturable Si platform. In the first route, we report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools. In the second route, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate using Nano-Ridge Engineering (NRE) combined with aspect ratio trapping (ART). We provide insight on the potential of these new technologies for the design of advanced front-end modules, including performance trade-offs, modelling and reliability challenges.",

author = "Bertrand Parvais and Uthayasankaran Peralagu and Abhitosh Vais and Alireza Alian and Liesbet Witters and Yves Mols and Amey Walke and Mark Ingels and Hao Yu and Vamsi Putcha and Ahmad Khaled and Raul Rodriguez and Arturo Sibaja-Hernandez and Sachin Yadav and Rana Elkashlan and Marina Baryshnikova and Geert Mannaert and Reynald Alcotte and Bernardette Kunert and Eddy Simoen and Ellen Zhao and \{De Jaeger\}, Brice and Daniel Fleetwood and Robert Langer and Ming Zhao and Piet Wambacq and Niamh Waldron and Nadine Collaert",

note = "Publisher Copyright: {\textcopyright} 2020 ECS - The Electrochemical Society.; 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020 ; Conference date: 10-05-2020 Through 14-05-2020",

year = "2020",

month = apr,

day = "1",

doi = "10.1149/09705.0027ecst",

language = "English",

series = "ECS Transactions",

publisher = "IOP Publishing Ltd.",

number = "5",

pages = "27--38",

editor = "J. Martino and B.-Y. Nguyen and Gamiz, \{F. J.\} and H. Ishii and J.-P. Raskin and S. Selberherr and E. Simoen",

booktitle = "237th ECS Meeting",

address = "United Kingdom",

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}

Parvais, B, Peralagu, U, Vais, A, Alian, A, Witters, L, Mols, Y, Walke, A, Ingels, M, Yu, H, Putcha, V, Khaled, A, Rodriguez, R, Sibaja-Hernandez, A, Yadav, S, Elkashlan, R, Baryshnikova, M, Mannaert, G, Alcotte, R, Kunert, B, Simoen, E, Zhao, E, De Jaeger, B, Fleetwood, D, Langer, R, Zhao, M, Wambacq, P, Waldron, N & Collaert, N 2020, Advanced transistors for high frequency applications. in J Martino, B-Y Nguyen, FJ Gamiz, H Ishii, J-P Raskin, S Selberherr & E Simoen (eds), 237th ECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 19. 5 edn, ECS Transactions, no. 5, vol. 97, IOP Publishing Ltd., pp. 27-38, 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020, Montreal, Canada, 10/05/20. https://doi.org/10.1149/09705.0027ecst

Advanced transistors for high frequency applications. / Parvais, Bertrand; Peralagu, Uthayasankaran; Vais, Abhitosh et al.
237th ECS Meeting: Advanced CMOS-Compatible Semiconductor Devices 19. ed. / J. Martino; B.-Y. Nguyen; F. J. Gamiz; H. Ishii; J.-P. Raskin; S. Selberherr; E. Simoen. 5. ed. IOP Publishing Ltd., 2020. p. 27-38 (ECS Transactions; Vol. 97, No. 5).

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

TY - CHAP

T1 - Advanced transistors for high frequency applications

AU - Parvais, Bertrand

AU - Peralagu, Uthayasankaran

AU - Vais, Abhitosh

AU - Alian, Alireza

AU - Witters, Liesbet

AU - Mols, Yves

AU - Walke, Amey

AU - Ingels, Mark

AU - Yu, Hao

AU - Putcha, Vamsi

AU - Khaled, Ahmad

AU - Rodriguez, Raul

AU - Sibaja-Hernandez, Arturo

AU - Yadav, Sachin

AU - Elkashlan, Rana

AU - Baryshnikova, Marina

AU - Mannaert, Geert

AU - Alcotte, Reynald

AU - Kunert, Bernardette

AU - Simoen, Eddy

AU - Zhao, Ellen

AU - De Jaeger, Brice

AU - Fleetwood, Daniel

AU - Langer, Robert

AU - Zhao, Ming

AU - Wambacq, Piet

AU - Waldron, Niamh

AU - Collaert, Nadine

PY - 2020/4/1

Y1 - 2020/4/1

N2 - Downscaling CMOS technology has allowed the integration of high-speed transceivers on silicon chips, but high-power amplifiers rely on III-V technologies to deliver the power and efficiency levels required by modern radios. In this work, we explore two routes to enable the fabrication of compound semiconductor devices on a large-scale manufacturable Si platform. In the first route, we report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools. In the second route, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate using Nano-Ridge Engineering (NRE) combined with aspect ratio trapping (ART). We provide insight on the potential of these new technologies for the design of advanced front-end modules, including performance trade-offs, modelling and reliability challenges.

AB - Downscaling CMOS technology has allowed the integration of high-speed transceivers on silicon chips, but high-power amplifiers rely on III-V technologies to deliver the power and efficiency levels required by modern radios. In this work, we explore two routes to enable the fabrication of compound semiconductor devices on a large-scale manufacturable Si platform. In the first route, we report on Al(Ga,In)N HEMTs, MISHEMTs and MOSFETs integrated on 200 mm Si wafers using Au-free processing in standard Si CMOS tools. In the second route, we demonstrate GaAs/InGaP HBTs grown on a 300 mm Si substrate using Nano-Ridge Engineering (NRE) combined with aspect ratio trapping (ART). We provide insight on the potential of these new technologies for the design of advanced front-end modules, including performance trade-offs, modelling and reliability challenges.

UR - https://www.scopus.com/pages/publications/85085863696

U2 - 10.1149/09705.0027ecst

DO - 10.1149/09705.0027ecst

M3 - Chapter

AN - SCOPUS:85085863696

T3 - ECS Transactions

SP - 27

EP - 38

BT - 237th ECS Meeting

A2 - Martino, J.

A2 - Nguyen, B.-Y.

A2 - Gamiz, F. J.

A2 - Ishii, H.

A2 - Raskin, J.-P.

A2 - Selberherr, S.

A2 - Simoen, E.

PB - IOP Publishing Ltd.

T2 - 237th ECS Meeting with the 18th International Meeting on Chemical Sensors, IMCS 2020

Y2 - 10 May 2020 through 14 May 2020

ER -

Advanced transistors for high frequency applications

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