@inproceedings{5a16632d21a94164becb7b13c7fc7412,
title = "Advances of the development of a ferroelectric field-effect transistor on Ge(001)",
abstract = "Here we report the recent advances towards the ferroelectric field-effect on Ge(001). We will demonstrate carrier density modulation in the underlying Ge(001) substrate by switching the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 on Ge. Recent results of patterning BaTiO3 for device applications and electrical properties of Pt/BTO/Ge heterostructures will be addressed.",
keywords = "BaTiO, Ferroelectric field-effect transistor, Ferroelectricity, Germanium, Non-volatile memory device",
author = "Patrick Ponath and Posadas, \{Agham B.\} and Yuan Ren and Xiaoyu Wu and Keji Lai and Alex Demkov and Michael Schmidt and Ray Duffy and Paul Hurley and Jian Wang and Chadwin Young and Vasudevan, \{Rama K.\} and Okatan, \{M. Baris\} and S. Jesse and Kalinin, \{Sergei V.\}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 2017 IEEE International Conference on IC Design and Technology, ICICDT 2017 ; Conference date: 23-05-2017 Through 25-05-2017",
year = "2017",
month = jul,
day = "26",
doi = "10.1109/ICICDT.2017.7993524",
language = "English",
series = "2017 IEEE International Conference on IC Design and Technology, ICICDT 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2017 IEEE International Conference on IC Design and Technology, ICICDT 2017",
address = "United States",
}