Advancing CMOS beyond the Si roadmap with Ge and III/V devices

M. Heyns; A. Alian; G. Brammertz; M. Caymax; Y. C. Chang; L. K. Chu; B. De Jaeger; G. Eneman; F. Gencarelli; G. Groeseneken; G. Hellings; A. Hikavyy; T. Y. Hoffmann; M. Houssa; C. Huyghebaert; D. Leonelli; D. Lin; R. Loo; W. Magnus; C. Merckling; M. Meuris; J. Mitard; L. Nyns; T. Orzali; R. Rooyackers; S. Sioncke; B. Soree; X. Sun; A. Vandooren; A. S. Verhulst; B. Vincent; N. Waldron; G. Wang; W. E. Wang; L. Witters

doi:10.1109/IEDM.2011.6131543

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

M. Heyns
, A. Alian
, G. Brammertz
, M. Caymax
, Y. C. Chang
, L. K. Chu
, B. De Jaeger
, G. Eneman
, F. Gencarelli
, G. Groeseneken
, G. Hellings
, A. Hikavyy
, T. Y. Hoffmann
, M. Houssa
, C. Huyghebaert
, D. Leonelli
, D. Lin
, R. Loo
, W. Magnus
, C. Merckling

M. Meuris, J. Mitard, L. Nyns, T. Orzali, R. Rooyackers, S. Sioncke, B. Soree, X. Sun, A. Vandooren, A. S. Verhulst, B. Vincent, N. Waldron, G. Wang, W. E. Wang, L. Witters

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

Over the last years there has been lots of interest in the use of germanium and III-V compounds as potential replacements for silicon channels. Germanium with its high hole mobility has attracted lots of attention for its application in advanced pMOS devices. Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS devices beyond 14 nm node technology.

Original language	English
Title of host publication	2011 International Electron Devices Meeting, IEDM 2011
Pages	13.1.1-13.1.4
DOIs	https://doi.org/10.1109/IEDM.2011.6131543
Publication status	Published - 2011
Externally published	Yes
Event	2011 IEEE International Electron Devices Meeting, IEDM 2011 - Washington, DC, United States Duration: 5 Dec 2011 → 7 Dec 2011

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2011 IEEE International Electron Devices Meeting, IEDM 2011
Country/Territory	United States
City	Washington, DC
Period	5/12/11 → 7/12/11

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10.1109/IEDM.2011.6131543

Cite this

Heyns, M., Alian, A., Brammertz, G., Caymax, M., Chang, Y. C., Chu, L. K., De Jaeger, B., Eneman, G., Gencarelli, F., Groeseneken, G., Hellings, G., Hikavyy, A., Hoffmann, T. Y., Houssa, M., Huyghebaert, C., Leonelli, D., Lin, D., Loo, R., Magnus, W., ... Witters, L. (2011). Advancing CMOS beyond the Si roadmap with Ge and III/V devices. In 2011 International Electron Devices Meeting, IEDM 2011 (pp. 13.1.1-13.1.4). Article 6131543 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2011.6131543

@inbook{171bf466d7fd48babb989f7e421100b4,

title = "Advancing CMOS beyond the Si roadmap with Ge and III/V devices",

abstract = "Over the last years there has been lots of interest in the use of germanium and III-V compounds as potential replacements for silicon channels. Germanium with its high hole mobility has attracted lots of attention for its application in advanced pMOS devices. Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS devices beyond 14 nm node technology.",

author = "M. Heyns and A. Alian and G. Brammertz and M. Caymax and Chang, \{Y. C.\} and Chu, \{L. K.\} and \{De Jaeger\}, B. and G. Eneman and F. Gencarelli and G. Groeseneken and G. Hellings and A. Hikavyy and Hoffmann, \{T. Y.\} and M. Houssa and C. Huyghebaert and D. Leonelli and D. Lin and R. Loo and W. Magnus and C. Merckling and M. Meuris and J. Mitard and L. Nyns and T. Orzali and R. Rooyackers and S. Sioncke and B. Soree and X. Sun and A. Vandooren and Verhulst, \{A. S.\} and B. Vincent and N. Waldron and G. Wang and Wang, \{W. E.\} and L. Witters",

year = "2011",

doi = "10.1109/IEDM.2011.6131543",

language = "English",

isbn = "9781457705052",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

pages = "13.1.1--13.1.4",

booktitle = "2011 International Electron Devices Meeting, IEDM 2011",

note = "2011 IEEE International Electron Devices Meeting, IEDM 2011 ; Conference date: 05-12-2011 Through 07-12-2011",

}

Heyns, M, Alian, A, Brammertz, G, Caymax, M, Chang, YC, Chu, LK, De Jaeger, B, Eneman, G, Gencarelli, F, Groeseneken, G, Hellings, G, Hikavyy, A, Hoffmann, TY, Houssa, M, Huyghebaert, C, Leonelli, D, Lin, D, Loo, R, Magnus, W, Merckling, C, Meuris, M, Mitard, J, Nyns, L, Orzali, T, Rooyackers, R, Sioncke, S, Soree, B, Sun, X, Vandooren, A, Verhulst, AS, Vincent, B, Waldron, N, Wang, G, Wang, WE & Witters, L 2011, Advancing CMOS beyond the Si roadmap with Ge and III/V devices. in 2011 International Electron Devices Meeting, IEDM 2011., 6131543, Technical Digest - International Electron Devices Meeting, IEDM, pp. 13.1.1-13.1.4, 2011 IEEE International Electron Devices Meeting, IEDM 2011, Washington, DC, United States, 5/12/11. https://doi.org/10.1109/IEDM.2011.6131543

TY - CHAP

T1 - Advancing CMOS beyond the Si roadmap with Ge and III/V devices

AU - Heyns, M.

AU - Alian, A.

AU - Brammertz, G.

AU - Caymax, M.

AU - Chang, Y. C.

AU - Chu, L. K.

AU - De Jaeger, B.

AU - Eneman, G.

AU - Gencarelli, F.

AU - Groeseneken, G.

AU - Hellings, G.

AU - Hikavyy, A.

AU - Hoffmann, T. Y.

AU - Houssa, M.

AU - Huyghebaert, C.

AU - Leonelli, D.

AU - Lin, D.

AU - Loo, R.

AU - Magnus, W.

AU - Merckling, C.

AU - Meuris, M.

AU - Mitard, J.

AU - Nyns, L.

AU - Orzali, T.

AU - Rooyackers, R.

AU - Sioncke, S.

AU - Soree, B.

AU - Sun, X.

AU - Vandooren, A.

AU - Verhulst, A. S.

AU - Vincent, B.

AU - Waldron, N.

AU - Wang, G.

AU - Wang, W. E.

AU - Witters, L.

PY - 2011

Y1 - 2011

N2 - Over the last years there has been lots of interest in the use of germanium and III-V compounds as potential replacements for silicon channels. Germanium with its high hole mobility has attracted lots of attention for its application in advanced pMOS devices. Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS devices beyond 14 nm node technology.

AB - Over the last years there has been lots of interest in the use of germanium and III-V compounds as potential replacements for silicon channels. Germanium with its high hole mobility has attracted lots of attention for its application in advanced pMOS devices. Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS devices beyond 14 nm node technology.

UR - https://www.scopus.com/pages/publications/84863067914

U2 - 10.1109/IEDM.2011.6131543

DO - 10.1109/IEDM.2011.6131543

M3 - Chapter

AN - SCOPUS:84863067914

SN - 9781457705052

T3 - Technical Digest - International Electron Devices Meeting, IEDM

SP - 13.1.1-13.1.4

BT - 2011 International Electron Devices Meeting, IEDM 2011

T2 - 2011 IEEE International Electron Devices Meeting, IEDM 2011

Y2 - 5 December 2011 through 7 December 2011

ER -

Advancing CMOS beyond the Si roadmap with Ge and III/V devices

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