Air-bridge high-speed InGaAs/InP waveguide photodiode

H. Yang; C. Ll M. Daunt; W. Han; K. Thomas; B. Corbett; F. H. Peters

doi:10.1117/12.922363

Air-bridge high-speed InGaAs/InP waveguide photodiode

H. Yang
, C. Ll M. Daunt
, W. Han
, K. Thomas
, B. Corbett
, F. H. Peters

University College Cork

Research output: Chapter in Book/Report/Conference proceedings › Chapter › peer-review

Abstract

The photodiode (PD) is a key component in optical transmission and optical measurement systems which receive optical signals and convert them into electric signals. High speed, high responsivity, high power and low dark current are desirable attributes of the PD in these applications, but also a simple fabrication process for high yield and low cost is essential for industry production. In this paper, an undercut-air-bridge high speed InGaAs/InP PIN structural photodiode is presented. By utilizing the crystal orientation dependent wet etching of InP material and designing the arms of the bridge with proper angle, the air bridge was easily obtained, which greatly eased the fabrication. The fabricated devices with 120μm×3μm ridge waveguides work robustly up to 30GHz in the measurements and potentially faster with optimized material.

Original language	English
Title of host publication	Optical Sensing and Detection II
DOIs	https://doi.org/10.1117/12.922363
Publication status	Published - 2012
Event	Optical Sensing and Detection II - Brussels, Belgium Duration: 16 Apr 2012 → 19 Apr 2012

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8439
ISSN (Print)	0277-786X

Conference

Conference	Optical Sensing and Detection II
Country/Territory	Belgium
City	Brussels
Period	16/04/12 → 19/04/12

Keywords

Air bridge
High speed
Optical communication
Photodiode
Waveguide
Wet etching

Access to Document

10.1117/12.922363

Cite this

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title = "Air-bridge high-speed InGaAs/InP waveguide photodiode",

abstract = "The photodiode (PD) is a key component in optical transmission and optical measurement systems which receive optical signals and convert them into electric signals. High speed, high responsivity, high power and low dark current are desirable attributes of the PD in these applications, but also a simple fabrication process for high yield and low cost is essential for industry production. In this paper, an undercut-air-bridge high speed InGaAs/InP PIN structural photodiode is presented. By utilizing the crystal orientation dependent wet etching of InP material and designing the arms of the bridge with proper angle, the air bridge was easily obtained, which greatly eased the fabrication. The fabricated devices with 120μm×3μm ridge waveguides work robustly up to 30GHz in the measurements and potentially faster with optimized material.",

keywords = "Air bridge, High speed, Optical communication, Photodiode, Waveguide, Wet etching",

author = "H. Yang and Daunt, \{C. Ll M.\} and W. Han and K. Thomas and B. Corbett and Peters, \{F. H.\}",

year = "2012",

doi = "10.1117/12.922363",

language = "English",

isbn = "9780819491312",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Optical Sensing and Detection II",

note = "Optical Sensing and Detection II ; Conference date: 16-04-2012 Through 19-04-2012",

}

TY - CHAP

T1 - Air-bridge high-speed InGaAs/InP waveguide photodiode

AU - Yang, H.

AU - Daunt, C. Ll M.

AU - Han, W.

AU - Thomas, K.

AU - Corbett, B.

AU - Peters, F. H.

PY - 2012

Y1 - 2012

N2 - The photodiode (PD) is a key component in optical transmission and optical measurement systems which receive optical signals and convert them into electric signals. High speed, high responsivity, high power and low dark current are desirable attributes of the PD in these applications, but also a simple fabrication process for high yield and low cost is essential for industry production. In this paper, an undercut-air-bridge high speed InGaAs/InP PIN structural photodiode is presented. By utilizing the crystal orientation dependent wet etching of InP material and designing the arms of the bridge with proper angle, the air bridge was easily obtained, which greatly eased the fabrication. The fabricated devices with 120μm×3μm ridge waveguides work robustly up to 30GHz in the measurements and potentially faster with optimized material.

AB - The photodiode (PD) is a key component in optical transmission and optical measurement systems which receive optical signals and convert them into electric signals. High speed, high responsivity, high power and low dark current are desirable attributes of the PD in these applications, but also a simple fabrication process for high yield and low cost is essential for industry production. In this paper, an undercut-air-bridge high speed InGaAs/InP PIN structural photodiode is presented. By utilizing the crystal orientation dependent wet etching of InP material and designing the arms of the bridge with proper angle, the air bridge was easily obtained, which greatly eased the fabrication. The fabricated devices with 120μm×3μm ridge waveguides work robustly up to 30GHz in the measurements and potentially faster with optimized material.

KW - Air bridge

KW - High speed

KW - Optical communication

KW - Photodiode

KW - Waveguide

KW - Wet etching

UR - https://www.scopus.com/pages/publications/84861926576

U2 - 10.1117/12.922363

DO - 10.1117/12.922363

M3 - Chapter

AN - SCOPUS:84861926576

SN - 9780819491312

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Optical Sensing and Detection II

T2 - Optical Sensing and Detection II

Y2 - 16 April 2012 through 19 April 2012

ER -

Air-bridge high-speed InGaAs/InP waveguide photodiode

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Keywords

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