@inbook{97aa2227a19f4693befe814a3f3c9cd9,
title = "AlGaN/GaN MISHEMT analysis from an analog point of view up to 150°C",
abstract = "In this paper MISHEMTs with two different gate dielectrics (Al2O3and SiNx) are analyzed focusing on some analog figures of merit like transconductance, output conductance, transistor efficiency, Early voltage and intrinsic voltage gain. The Al2O3dielectric MISHEMT presented a degraded output characteristic in the bias range studied with a large self-heating turning the analog parameters impossible to be determined. The gate leakage of the SiNx MISHEMT is very high which degrades the subthreshold regime, decreasing the transistor efficiency at weak inversion, but the DIBL is much better than for the Al2O3devices. The SiNx devices present much better output characteristics resulting in a relatively large Early voltage and intrinsic voltage gain in strong inversion for this kind of devices up to 84 V/V (38.5 dB). The degradation with the temperature is small (around 1.5 dB from 25 °C to 150 °C) at strong inversion operation regime.",
keywords = "Analog operation, High temperature, MISHEMT",
author = "Agopian, \{P. G.D.\} and Martino, \{J. A.\} and E. Simoen and S. Peralagu and B. Parvais and N. Waldron and N. Collaert",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020 ; Conference date: 01-09-2020 Through 30-09-2020",
year = "2020",
month = sep,
day = "1",
doi = "10.1109/EUROSOI-ULIS49407.2020.9365527",
language = "English",
series = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, EUROSOI-ULIS 2020",
address = "United States",
}