@inbook{0c0cada7f30945fcbba39071a00792a2,
title = "AlInGaAs surface normal photodiode for 2 μm optical communication systems",
abstract = "High bandwidth 2 μm wavelength surface normal p-i-n photodiodes using a high indium-content InGaAs strain-relaxed absorbing layer clad by p and n doped AlInGaAs layers are realised. A parabolic grading was used to relax the lattice constant from that of the InP substrate. We compare structures with different p-doping profiles and absorber thicknesses to achieve a 3-dB bandwidth of around 10 GHz while maintaining a photoresponsivity of 0.93 A/W. A clear opening of the 10 Gbit/s eye pattern was obtained with an input power of-3.07 dBm. By temperature-control of the mesa passivation process the device leakage was reduced to 0.52 μA at-5 V bias.",
keywords = "2 μm, High speed photodiode, InGaAs",
author = "N. Ye and H. Yang and M. Gleeson and N. Pavarelli and Zhang, \{H. Y.\} and J. O'Callaghan and W. Han and N. Nudds and S. Collins and A. Gocalinska and E. Pelucchi and P. O'Brien and Gunning, \{F. C.Garcia\} and Peters, \{F. H.\} and B. Corbett",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE Photonics Conference, IPC 2015 ; Conference date: 30-08-2015 Through 31-08-2015",
year = "2015",
month = nov,
day = "9",
doi = "10.1109/IPCon.2015.7323722",
language = "English",
series = "2015 IEEE Photonics Conference, IPC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "456--459",
booktitle = "2015 IEEE Photonics Conference, IPC 2015",
address = "United States",
}