AlInN optical confinement layers for edge emitting group III-nitride laser structures

Al_1-xIn_xN ternary alloys with solid phase indium compositions between x = 0.15 and 0.28 have been grown by metalorganic chemical vapor deposition under indium rich conditions. Within the growth temperature range of 750-810 °C the indium incorporation into the solid is increasingly reduced by a competing process with thermal activation energy of 1.07 eV. Using this growth scheme, smooth epitaxial layers with root mean-squares surfaces roughness of 0.3-0.8 nm are obtained. Extrinsic origin is suggested for the low temperature photoluminescence peak associated with these layers. (Al,In)N films lattice-matched to GaN have been introduced into laser diode structures for optical confinement. Optical gain is observed.