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AlInN optical confinement layers for edge emitting group III-nitride laser structures
H. P.D. Schenk
, M. Nemoz
, M. Korytov
, P. Vennéguès
, P. Demolon
, A. D. Dräger
, A. Hangleiter
, R. Charash
, P. P. Maaskant
,
B. Corbett
, J. Y. Duboz
Tyndall
Tyndall Photonics
School of Physics
CNRS
PICOGIGA International SAS
Technical University of Braunschweig
Research output
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Contribution to journal
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Article
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peer-review
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Engineering
Vapor Deposition
100%
Nitride
100%
Low-Temperature
100%
Growth Temperature
100%
Temperature Range
100%
Epitaxial Film
100%
Chemical Vapor Deposition
100%
Ternary Alloy
100%
Activation Energy
100%
Root Mean Square
100%
Optical Gain
100%
Rich Condition
100%
Competing Process
100%
Material Science
Indium
100%
Nitride Compound
100%
Film
33%
Photoluminescence
33%
Surface Roughness
33%
Epitaxial Film
33%
Chemical Vapor Deposition
33%
Activation Energy
33%
Laser Diode
33%
Ternary Alloy
33%
Physics
Nitride
100%
Indium
100%
Semiconductor Laser
33%
Photoluminescence
33%
Ternary Alloy
33%
Metalorganic Chemical Vapor Deposition
33%
Activation Energy
33%
Surface Roughness
33%