@inproceedings{ed4aaf308db8494a9dea0e4466f2f0f9,
title = "Alloy scattering of substitutional carbon in silicon: A first principles approach",
abstract = "A method is developed to obtain the alloy scattering coefficients from first-principles band structure calculations. It is found that the scattering matrix can be decomposed into two additive components: a chemical part due to atomic substitution and a part due to ionic relaxation. The method is then applied to find the intra-and inter-valley electron scattering rates for substitutional carbon in silicon. Intravalley scattering is found to be the dominant process.",
author = "Vaughan, \{M. P.\} and F. Murphy-Armando and S. Fahy",
year = "2011",
doi = "10.1109/ULIS.2011.5757983",
language = "English",
isbn = "9781457700903",
series = "2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011",
pages = "99--102",
booktitle = "2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011",
note = "2011 12th International Conference on Ultimate Integration on Silicon, ULIS 2011 ; Conference date: 14-03-2011 Through 16-03-2011",
}