AlN heteroepitaxy on sapphire by metalorganic vapour phase epitaxy using low temperature nucleation layers

Material Science

• Aluminum Nitride 100%
• Atomic Force Microscopy 33%
• Defect Density 33%
• Epitaxial Film 33%
• Heteroepitaxy 100%
• Nucleation 100%
• Sapphire 100%
• Surface (Surface Science) 66%
• Surface Morphology 33%
• Vapor Phase Epitaxy 100%

Engineering

• Atomic Force Microscopy 50%
• Defect Density 50%
• Epitaxial Film 50%
• Low-Temperature 100%
• Material Quality 50%
• Sapphire Substrate 50%
• Smooth Surface 50%
• Step Process 100%
• Surface Morphology 50%
• Threading Dislocation 50%

Physics

• Atomic Force Microscopy 50%
• Metalorganic Vapor Phase Epitaxy 100%
• Nucleation 100%