An improved calculation of copper losses in integrated power inductors on silicon

Ningning Wang; Terence O'Donnell; Cian O'Mathuna

doi:10.1109/TPEL.2012.2227805

An improved calculation of copper losses in integrated power inductors on silicon

Ningning Wang
, Terence O'Donnell
, Cian O'Mathuna

Tyndall IPES (Integrated Power)

Research output: Contribution to journal › Article › peer-review

Abstract

Thin-film Si-integrated inductors with closed cores have different magnetic field distributions in the winding window space compared to the inductors with unclosed cores. One-dimensional methods are no longer applicable for these inductors to calculate the ac resistance. Based on the analysis of the magnetic field distribution of the devices, a 2-D field solution was developed, which leads to an improved 2-D method to calculate the ac resistance of the device. High accuracy of this new approach has been verified by finite-element analysis, while 1-D methods can lead to significant errors.

Original language	English
Article number	6353960
Pages (from-to)	3641-3647
Number of pages	7
Journal	IEEE Transactions on Power Electronics
Volume	28
Issue number	8
DOIs	https://doi.org/10.1109/TPEL.2012.2227805
Publication status	Published - 2013

Keywords

Conductors
eddy currents
skin effect
thin-film inductors
windings

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10.1109/TPEL.2012.2227805

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@article{b8c7ef7631034a30807f9517bf7bdbb1,

title = "An improved calculation of copper losses in integrated power inductors on silicon",

abstract = "Thin-film Si-integrated inductors with closed cores have different magnetic field distributions in the winding window space compared to the inductors with unclosed cores. One-dimensional methods are no longer applicable for these inductors to calculate the ac resistance. Based on the analysis of the magnetic field distribution of the devices, a 2-D field solution was developed, which leads to an improved 2-D method to calculate the ac resistance of the device. High accuracy of this new approach has been verified by finite-element analysis, while 1-D methods can lead to significant errors.",

keywords = "Conductors, eddy currents, skin effect, thin-film inductors, windings",

author = "Ningning Wang and Terence O'Donnell and Cian O'Mathuna",

year = "2013",

doi = "10.1109/TPEL.2012.2227805",

language = "English",

volume = "28",

pages = "3641--3647",

journal = "IEEE Transactions on Power Electronics",

issn = "0885-8993",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - An improved calculation of copper losses in integrated power inductors on silicon

AU - Wang, Ningning

AU - O'Donnell, Terence

AU - O'Mathuna, Cian

PY - 2013

Y1 - 2013

N2 - Thin-film Si-integrated inductors with closed cores have different magnetic field distributions in the winding window space compared to the inductors with unclosed cores. One-dimensional methods are no longer applicable for these inductors to calculate the ac resistance. Based on the analysis of the magnetic field distribution of the devices, a 2-D field solution was developed, which leads to an improved 2-D method to calculate the ac resistance of the device. High accuracy of this new approach has been verified by finite-element analysis, while 1-D methods can lead to significant errors.

AB - Thin-film Si-integrated inductors with closed cores have different magnetic field distributions in the winding window space compared to the inductors with unclosed cores. One-dimensional methods are no longer applicable for these inductors to calculate the ac resistance. Based on the analysis of the magnetic field distribution of the devices, a 2-D field solution was developed, which leads to an improved 2-D method to calculate the ac resistance of the device. High accuracy of this new approach has been verified by finite-element analysis, while 1-D methods can lead to significant errors.

KW - Conductors

KW - eddy currents

KW - skin effect

KW - thin-film inductors

KW - windings

UR - https://www.scopus.com/pages/publications/84872835627

U2 - 10.1109/TPEL.2012.2227805

DO - 10.1109/TPEL.2012.2227805

M3 - Article

AN - SCOPUS:84872835627

SN - 0885-8993

VL - 28

SP - 3641

EP - 3647

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

IS - 8

M1 - 6353960

ER -

An improved calculation of copper losses in integrated power inductors on silicon

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