Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach

Samuel Aldana; Pedro Garcia Fernandez; Rocio Romero-Zaliz; Francisco Jiménez-Molinos; Francisco Gómez-Campos; Juan Bautista Roldán Aranda

doi:10.1116/1.5049213

Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach

Samuel Aldana
, Pedro Garcia Fernandez
, Rocio Romero-Zaliz
, Francisco Jiménez-Molinos
, Francisco Gómez-Campos
, Juan Bautista Roldán Aranda

Research output: Contribution to journal › Article › peer-review

Abstract

An in-depth physical study of conductive filaments (CFs) density in Ni/HfO 2/Si-n+ unipolar resistive random access memories (RRAMs) has been performed. To do so, the authors have employed both experimental measurements and simulations by means of a 3D kinetic Monte Carlo (kMC) tool. The kMC simulator accounts for redox reactions and ion migration considering the three dimensional (3D) temperature and electric potential distributions within the device dielectric at each simulation time step. The formation and destruction of conductive filaments are described; in particular, the CF density is calculated making use of a new methodology proposed here. The CF ohmic resistance can be linked to the CF density. Finally, the 2D and 3D percolation paths within the conductive filaments are analyzed to characterize the low resistance state of the RRAM under study.

Original language	English
Journal	Journal of Vacuum Science and Technology B
Volume	36
Issue number	6
DOIs	https://doi.org/10.1116/1.5049213
Publication status	Published - 1 Nov 2018
Externally published	Yes

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title = "Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach",

abstract = "An in-depth physical study of conductive filaments (CFs) density in Ni/HfO 2/Si-n+ unipolar resistive random access memories (RRAMs) has been performed. To do so, the authors have employed both experimental measurements and simulations by means of a 3D kinetic Monte Carlo (kMC) tool. The kMC simulator accounts for redox reactions and ion migration considering the three dimensional (3D) temperature and electric potential distributions within the device dielectric at each simulation time step. The formation and destruction of conductive filaments are described; in particular, the CF density is calculated making use of a new methodology proposed here. The CF ohmic resistance can be linked to the CF density. Finally, the 2D and 3D percolation paths within the conductive filaments are analyzed to characterize the low resistance state of the RRAM under study.",

author = "Samuel Aldana and \{Garcia Fernandez\}, Pedro and Rocio Romero-Zaliz and Francisco Jim{\'e}nez-Molinos and Francisco G{\'o}mez-Campos and \{Rold{\'a}n Aranda\}, \{Juan Bautista\}",

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T1 - Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach

AU - Aldana, Samuel

AU - Garcia Fernandez, Pedro

AU - Romero-Zaliz, Rocio

AU - Jiménez-Molinos, Francisco

AU - Gómez-Campos, Francisco

AU - Roldán Aranda, Juan Bautista

PY - 2018/11/1

Y1 - 2018/11/1

N2 - An in-depth physical study of conductive filaments (CFs) density in Ni/HfO 2/Si-n+ unipolar resistive random access memories (RRAMs) has been performed. To do so, the authors have employed both experimental measurements and simulations by means of a 3D kinetic Monte Carlo (kMC) tool. The kMC simulator accounts for redox reactions and ion migration considering the three dimensional (3D) temperature and electric potential distributions within the device dielectric at each simulation time step. The formation and destruction of conductive filaments are described; in particular, the CF density is calculated making use of a new methodology proposed here. The CF ohmic resistance can be linked to the CF density. Finally, the 2D and 3D percolation paths within the conductive filaments are analyzed to characterize the low resistance state of the RRAM under study.

AB - An in-depth physical study of conductive filaments (CFs) density in Ni/HfO 2/Si-n+ unipolar resistive random access memories (RRAMs) has been performed. To do so, the authors have employed both experimental measurements and simulations by means of a 3D kinetic Monte Carlo (kMC) tool. The kMC simulator accounts for redox reactions and ion migration considering the three dimensional (3D) temperature and electric potential distributions within the device dielectric at each simulation time step. The formation and destruction of conductive filaments are described; in particular, the CF density is calculated making use of a new methodology proposed here. The CF ohmic resistance can be linked to the CF density. Finally, the 2D and 3D percolation paths within the conductive filaments are analyzed to characterize the low resistance state of the RRAM under study.

UR - http://dx.doi.org/10.1116/1.5049213

U2 - 10.1116/1.5049213

DO - 10.1116/1.5049213

M3 - Article

SN - 2166-2746

VL - 36

JO - Journal of Vacuum Science and Technology B

JF - Journal of Vacuum Science and Technology B

IS - 6

ER -

Analysis of conductive filament density in resistive random access memories: a 3D kinetic Monte Carlo approach

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