Analysis of electrically active defects at Si(100) - HfO2 interface

B. J. O'Sullivan; E. O'Connor; P. K. Hurley; M. Modreanu; F. Roussel; H. Roussel; M. A. Audier; J. P. Sénateur; Q. Fang; I. W. Boyd; C. Jimenez; T. Leedham

Analysis of electrically active defects at Si(100) - HfO₂ interface

B. J. O'Sullivan
, E. O'Connor
, P. K. Hurley
, M. Modreanu
, F. Roussel
, H. Roussel
, M. A. Audier
, J. P. Sénateur
, Q. Fang
, I. W. Boyd
, C. Jimenez
, T. Leedham

Research output: Contribution to conference › Paper › peer-review

Abstract

Results are presented from an analysis of the electrically activity of defects at the Si(100)/HfO₂ interface. Two clear peaks emerge in the interface state density profiles, at specific energies in the upper and lower energy gap, when the high K samples were deposited at sufficiently low temperatures to prevent hydrogen passivation of interface defects. The location of these peaks correspond to the location of P_b0 (/P_b1) defects in the Si(100)/SiO₂ system. Defect densities are estimated to be of order mid 10¹² cm^-2 for HfO₂ samples. This density is significantly higher than is the case in the Si(100)/SiO ₂ system, and seems relatively independent of surface preparation steps performed. Performing a forming gas anneal at 450°C for 30 mins is not sufficient to fully passivate these interface defects, as is the case in the Si/SiO₂ system.

Original language	English
Pages	197-206
Number of pages	10
Publication status	Published - 2003
Event	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States Duration: 20 Oct 2002 → 24 Oct 2002

Conference

Conference	Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
Country/Territory	United States
City	Salt Lake City, UT
Period	20/10/02 → 24/10/02

Cite this

O'Sullivan, B. J., O'Connor, E., Hurley, P. K., Modreanu, M., Roussel, F., Roussel, H., Audier, M. A., Sénateur, J. P., Fang, Q., Boyd, I. W., Jimenez, C., & Leedham, T. (2003). Analysis of electrically active defects at Si(100) - HfO₂ interface. 197-206. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

O'Sullivan, B. J. ; O'Connor, E. ; Hurley, P. K. et al. / Analysis of electrically active defects at Si(100) - HfO₂ interface. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.10 p.

@conference{3c7c93104c2540c3a904c53ff1f57107,

title = "Analysis of electrically active defects at Si(100) - HfO2 interface",

abstract = "Results are presented from an analysis of the electrically activity of defects at the Si(100)/HfO2 interface. Two clear peaks emerge in the interface state density profiles, at specific energies in the upper and lower energy gap, when the high K samples were deposited at sufficiently low temperatures to prevent hydrogen passivation of interface defects. The location of these peaks correspond to the location of Pb0 (/Pb1) defects in the Si(100)/SiO2 system. Defect densities are estimated to be of order mid 1012 cm-2 for HfO2 samples. This density is significantly higher than is the case in the Si(100)/SiO 2 system, and seems relatively independent of surface preparation steps performed. Performing a forming gas anneal at 450°C for 30 mins is not sufficient to fully passivate these interface defects, as is the case in the Si/SiO2 system.",

author = "O'Sullivan, \{B. J.\} and E. O'Connor and Hurley, \{P. K.\} and M. Modreanu and F. Roussel and H. Roussel and Audier, \{M. A.\} and S{\'e}nateur, \{J. P.\} and Q. Fang and Boyd, \{I. W.\} and C. Jimenez and T. Leedham",

year = "2003",

language = "English",

pages = "197--206",

note = "Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues ; Conference date: 20-10-2002 Through 24-10-2002",

}

O'Sullivan, BJ, O'Connor, E, Hurley, PK , Modreanu, M, Roussel, F, Roussel, H, Audier, MA, Sénateur, JP, Fang, Q, Boyd, IW, Jimenez, C & Leedham, T 2003, 'Analysis of electrically active defects at Si(100) - HfO₂ interface', Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States, 20/10/02 - 24/10/02 pp. 197-206.

Analysis of electrically active defects at Si(100) - HfO₂ interface. / O'Sullivan, B. J.; O'Connor, E.; Hurley, P. K. et al.
2003. 197-206 Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Analysis of electrically active defects at Si(100) - HfO2 interface

AU - O'Sullivan, B. J.

AU - O'Connor, E.

AU - Hurley, P. K.

AU - Modreanu, M.

AU - Roussel, F.

AU - Roussel, H.

AU - Audier, M. A.

AU - Sénateur, J. P.

AU - Fang, Q.

AU - Boyd, I. W.

AU - Jimenez, C.

AU - Leedham, T.

PY - 2003

Y1 - 2003

N2 - Results are presented from an analysis of the electrically activity of defects at the Si(100)/HfO2 interface. Two clear peaks emerge in the interface state density profiles, at specific energies in the upper and lower energy gap, when the high K samples were deposited at sufficiently low temperatures to prevent hydrogen passivation of interface defects. The location of these peaks correspond to the location of Pb0 (/Pb1) defects in the Si(100)/SiO2 system. Defect densities are estimated to be of order mid 1012 cm-2 for HfO2 samples. This density is significantly higher than is the case in the Si(100)/SiO 2 system, and seems relatively independent of surface preparation steps performed. Performing a forming gas anneal at 450°C for 30 mins is not sufficient to fully passivate these interface defects, as is the case in the Si/SiO2 system.

AB - Results are presented from an analysis of the electrically activity of defects at the Si(100)/HfO2 interface. Two clear peaks emerge in the interface state density profiles, at specific energies in the upper and lower energy gap, when the high K samples were deposited at sufficiently low temperatures to prevent hydrogen passivation of interface defects. The location of these peaks correspond to the location of Pb0 (/Pb1) defects in the Si(100)/SiO2 system. Defect densities are estimated to be of order mid 1012 cm-2 for HfO2 samples. This density is significantly higher than is the case in the Si(100)/SiO 2 system, and seems relatively independent of surface preparation steps performed. Performing a forming gas anneal at 450°C for 30 mins is not sufficient to fully passivate these interface defects, as is the case in the Si/SiO2 system.

UR - https://www.scopus.com/pages/publications/8744293171

M3 - Paper

AN - SCOPUS:8744293171

SP - 197

EP - 206

T2 - Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues

Y2 - 20 October 2002 through 24 October 2002

ER -

O'Sullivan BJ, O'Connor E, Hurley PK , Modreanu M, Roussel F, Roussel H et al.. Analysis of electrically active defects at Si(100) - HfO₂ interface. 2003. Paper presented at Physics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues, Salt Lake City, UT, United States.

Analysis of electrically active defects at Si(100) - HfO₂ interface

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