Analysis of germanium-doped silicon vertical PN junction optical phase shifter

  • Darpan Mishra
  • , Ramesh Kumar Sonkar

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, the performance of a germanium-doped silicon optical phase shifter with vertical PN junction has been investigated. The proposed phase shifter is simulated using a process simulation tool, and 2D carrier distribution has been used to calculate the phase shifter performance metrics. The designed phase shifter is integrated into a Mach-Zehnder interferometer structure, and the transfer characteristics are plotted. The proposed phase shifter has a phase shift of ~141°/mm, VπLπ of ~0.64 V · cm, insertion loss of ~1.23 dB, and 3 dB bandwidth of ~37 GHz at 5 V reverse bias.

Original languageEnglish
Pages (from-to)1348-1354
Number of pages7
JournalJournal of the Optical Society of America B: Optical Physics
Volume36
Issue number5
DOIs
Publication statusPublished - 2019
Externally publishedYes

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