Analysis of optical emission from high-aluminum AlGaN quantum-well structures

S. Wieczorek; W. W. Chow; S. R. Lee; A. J. Fischer; A. A. Allerman; M. H. Crawford

doi:10.1063/1.1763211

Analysis of optical emission from high-aluminum AlGaN quantum-well structures

S. Wieczorek
, W. W. Chow
, S. R. Lee
, A. J. Fischer
, A. A. Allerman
, M. H. Crawford

Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Article › peer-review

Abstract

The combined effects of strain, internal electric field, and many-body Coulomb interactions were used to investigate the spontaneous emission in AlGaN wurtzite quantum wells. The optical properties depended on the quntum-well configuration due the combined effects. It was found that for certain Al concentration the effects of the internal quantum field were mitigated in the quantum well. The method could be effectively applied for applications such as in ultraviolet light-emitting diodes and lasers.

Original language	English
Pages (from-to)	4899-4901
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	24
DOIs	https://doi.org/10.1063/1.1763211
Publication status	Published - 14 Jun 2004
Externally published	Yes

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abstract = "The combined effects of strain, internal electric field, and many-body Coulomb interactions were used to investigate the spontaneous emission in AlGaN wurtzite quantum wells. The optical properties depended on the quntum-well configuration due the combined effects. It was found that for certain Al concentration the effects of the internal quantum field were mitigated in the quantum well. The method could be effectively applied for applications such as in ultraviolet light-emitting diodes and lasers.",

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year = "2004",

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AU - Lee, S. R.

AU - Fischer, A. J.

AU - Allerman, A. A.

AU - Crawford, M. H.

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Y1 - 2004/6/14

N2 - The combined effects of strain, internal electric field, and many-body Coulomb interactions were used to investigate the spontaneous emission in AlGaN wurtzite quantum wells. The optical properties depended on the quntum-well configuration due the combined effects. It was found that for certain Al concentration the effects of the internal quantum field were mitigated in the quantum well. The method could be effectively applied for applications such as in ultraviolet light-emitting diodes and lasers.

AB - The combined effects of strain, internal electric field, and many-body Coulomb interactions were used to investigate the spontaneous emission in AlGaN wurtzite quantum wells. The optical properties depended on the quntum-well configuration due the combined effects. It was found that for certain Al concentration the effects of the internal quantum field were mitigated in the quantum well. The method could be effectively applied for applications such as in ultraviolet light-emitting diodes and lasers.

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JO - Applied Physics Letters

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Analysis of optical emission from high-aluminum AlGaN quantum-well structures

Abstract

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