Skip to main navigation Skip to search Skip to main content

Analysis of optical emission from high-aluminum AlGaN quantum-well structures

  • S. Wieczorek
  • , W. W. Chow
  • , S. R. Lee
  • , A. J. Fischer
  • , A. A. Allerman
  • , M. H. Crawford
  • Sandia National Laboratories, New Mexico

Research output: Contribution to journal › Article › peer-review

Abstract

The combined effects of strain, internal electric field, and many-body Coulomb interactions were used to investigate the spontaneous emission in AlGaN wurtzite quantum wells. The optical properties depended on the quntum-well configuration due the combined effects. It was found that for certain Al concentration the effects of the internal quantum field were mitigated in the quantum well. The method could be effectively applied for applications such as in ultraviolet light-emitting diodes and lasers.

Original languageEnglish
Pages (from-to)4899-4901
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number24
DOIs
Publication statusPublished - 14 Jun 2004
Externally publishedYes

Fingerprint

Dive into the research topics of 'Analysis of optical emission from high-aluminum AlGaN quantum-well structures'. Together they form a unique fingerprint.

Cite this