Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing

P. K. Hurley; A. Stesmans; V. V. Afanas'ev; B. J. O'Sullivan; E. O'Callaghan

doi:10.1063/1.1559428

Analysis of P_b centers at the Si(111)/SiO₂ interface following rapid thermal annealing

P. K. Hurley
, A. Stesmans
, V. V. Afanas'ev
, B. J. O'Sullivan
, E. O'Callaghan

Research output: Contribution to journal › Article › peer-review

Abstract

A study was performed on the defects at the Si(111)/SiO₂ interface following rapid thermal annealing (RTA). The electron spin resonance and quasistatic capacitance-voltage characterization identified the defects as the P_b signal for the oxidized Si(111) orientation. The results showed that the P_b density inferred from electron spin resonance was in good agreement with the electrically active interface state density.

Original language	English
Pages (from-to)	3971-3973
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	7
DOIs	https://doi.org/10.1063/1.1559428
Publication status	Published - 1 Apr 2003

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https://hdl.handle.net/10468/4237Licence: CC BY-NC-ND

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title = "Analysis of Pb centers at the Si(111)/SiO2 interface following rapid thermal annealing",

abstract = "A study was performed on the defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA). The electron spin resonance and quasistatic capacitance-voltage characterization identified the defects as the Pb signal for the oxidized Si(111) orientation. The results showed that the Pb density inferred from electron spin resonance was in good agreement with the electrically active interface state density.",

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AU - Hurley, P. K.

AU - Stesmans, A.

AU - Afanas'ev, V. V.

AU - O'Sullivan, B. J.

AU - O'Callaghan, E.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - A study was performed on the defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA). The electron spin resonance and quasistatic capacitance-voltage characterization identified the defects as the Pb signal for the oxidized Si(111) orientation. The results showed that the Pb density inferred from electron spin resonance was in good agreement with the electrically active interface state density.

AB - A study was performed on the defects at the Si(111)/SiO2 interface following rapid thermal annealing (RTA). The electron spin resonance and quasistatic capacitance-voltage characterization identified the defects as the Pb signal for the oxidized Si(111) orientation. The results showed that the Pb density inferred from electron spin resonance was in good agreement with the electrically active interface state density.

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U2 - 10.1063/1.1559428

DO - 10.1063/1.1559428

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Analysis of P_b centers at the Si(111)/SiO₂ interface following rapid thermal annealing

Abstract

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