Analysis of the breakdown spots spatial distribution in large area MOS structures

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Abstract

The spatial distribution of multiple breakdown (BD) spots in large area MOS structures was investigated. By means of applying image processing and point pattern analysis techniques we provide for the first time direct evidence that the BD spots' locations are spatially uncorrelated as expected for a Poisson process. For completeness, we show how the available mathematical tools might be utilized to detect interactions (repulsion or attraction) between the spots as well as weak regions in the dielectric layer. In this way, the methods considered here can complement standard reliability techniques based on a large set of samples.

Original languageEnglish
Title of host publication2010 IEEE International Reliability Physics Symposium, IRPS 2010
Pages775-777
Number of pages3
DOIs
Publication statusPublished - 2010
Event2010 IEEE International Reliability Physics Symposium, IRPS 2010 - Garden Grove, CA, Canada
Duration: 2 May 20106 May 2010

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Conference

Conference2010 IEEE International Reliability Physics Symposium, IRPS 2010
Country/TerritoryCanada
CityGarden Grove, CA
Period2/05/106/05/10

Keywords

  • Breakdown
  • High-κ
  • MOS
  • Reliability

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