Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime

S. P. Hegarty; G. Huyet; P. Porta; J. G. McInerney

doi:10.1364/OL.23.001206

Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime

S. P. Hegarty
, G. Huyet
, P. Porta
, J. G. McInerney

School of Physics

University College Cork

Research output: Contribution to journal › Article › peer-review

Abstract

We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.

Original language	English
Pages (from-to)	1206-1208
Number of pages	3
Journal	Optics Letters
Volume	23
Issue number	15
DOIs	https://doi.org/10.1364/OL.23.001206
Publication status	Published - 1 Aug 1998

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title = "Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime",

abstract = "We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.",

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AU - Porta, P.

AU - McInerney, J. G.

PY - 1998/8/1

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N2 - We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.

AB - We experimentally investigate the temporal evolution of the power of an external cavity semiconductor laser in the low-frequency fluctuation regime with subnanosecond resolution. We show, for the first time to our knowledge, that generally the laser power drops to a value significantly different from the solitary laser power. We demonstrate the analogy between the recovery of the laser intensity and the turn-on transient of a semiconductor laser.

UR - https://www.scopus.com/pages/publications/0009332454

U2 - 10.1364/OL.23.001206

DO - 10.1364/OL.23.001206

M3 - Article

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SP - 1206

EP - 1208

JO - Optics Letters

JF - Optics Letters

IS - 15

ER -

Analysis of the fast recovery dynamics of a semiconductor laser with feedback in the low-frequency fluctuation regime

Abstract

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