Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment

É O'Connor; S. Monaghan; K. Cherkaoui; I. M. Povey; P. K. Hurley

doi:10.1063/1.3663535

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al₂O₃/In_0.53Ga_0.47As/InP capacitors following an optimized (NH₄)₂S treatment

University College Cork

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Abstract

The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al₂O₃ on n-type and p-type In_0.53Ga_0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al ₂O₃/In_0.53Ga_0.47As devices following an optimized ammonium sulfide (NH₄)₂S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation- recombination regime to a diffusion controlled response.

Original language	English
Article number	212901
Journal	Applied Physics Letters
Volume	99
Issue number	21
DOIs	https://doi.org/10.1063/1.3663535
Publication status	Published - 21 Nov 2011

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title = "Analysis of the minority carrier response of n-type and p-type Au/Ni/Al2O3/In0.53Ga0.47As/InP capacitors following an optimized (NH4)2S treatment",

abstract = "The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al 2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)2S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation- recombination regime to a diffusion controlled response.",

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year = "2011",

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doi = "10.1063/1.3663535",

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volume = "99",

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AU - O'Connor, É

AU - Monaghan, S.

AU - Cherkaoui, K.

AU - Povey, I. M.

AU - Hurley, P. K.

PY - 2011/11/21

Y1 - 2011/11/21

N2 - The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al 2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)2S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation- recombination regime to a diffusion controlled response.

AB - The electrical properties of metal-oxide-semiconductor capacitors incorporating atomic layer deposited Al2O3 on n-type and p-type In0.53Ga0.47As were investigated. A clear minority carrier response was observed for both n-type and p-type Au/Ni/Al 2O3/In0.53Ga0.47As devices following an optimized ammonium sulfide (NH4)2S treatment. Capacitance-voltage and conductance-voltage measurements performed at varying temperatures allowed an Arrhenius extraction of activation energies for the minority carrier response, indicating a transition from a generation- recombination regime to a diffusion controlled response.

UR - https://www.scopus.com/pages/publications/81855213237

U2 - 10.1063/1.3663535

DO - 10.1063/1.3663535

M3 - Article

AN - SCOPUS:81855213237

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

M1 - 212901

ER -

Analysis of the minority carrier response of n-type and p-type Au/Ni/Al₂O₃/In_0.53Ga_0.47As/InP capacitors following an optimized (NH₄)₂S treatment

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