Annealing investigations for high-k first n-channel In _0.53Ga_0.47As MOSFET development

We present the development of a high-k first n-channel InGaAs metal-oxide-semiconductor field effect transistors (MOSFETs) and the effect of annealing on the source/drain (S/D) sheet resistance (R_s) and the high-k gate oxide. Test structures based on the transfer length method (TLM) were used as part of a design of experiment (DOE) to optimize the S/D implant activation process. The optimized process was 715°C for 32 s, leading to a minimum R_s of (195.6 ± 3.4) Ω/□. Metal-oxide-semiconductor capacitors (MOSCAPs) with a 2 nm Al₂O ₃ / 8 nm HfO₂ gate oxide were annealed at 675°C, 700°C and 725°C for 30 s. Leakage current lower than 2.1×10 ^-8 A/cm² were obtained for electric fields of ∼3 MV/cm and low frequency dispersion of capacitance in accumulation (<1.7%) were obtained. Densities of interface states (D_IT) were estimated using the conductance method. The output characteristics of a 5-μm gate length MOSFET annealed at 650°C is presented.