APCVD doped oxides used as etch mask in KOH solution

P. Cosmin; M. Modreanu; S. Cosmin; C. Dunare; D. Popescu

APCVD doped oxides used as etch mask in KOH solution

P. Cosmin
, M. Modreanu
, S. Cosmin
, C. Dunare
, D. Popescu

National Institute for Research and Development in Microtechnologies Romania

Research output: Contribution to conference › Paper › peer-review

Abstract

This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. The experiments draw to the conclusion that the best film is densified borophosphosilicate glass with 4 wt.% P and 23 wt.% B. Also good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metalisation process.

Original language	English
Pages	257-260
Number of pages	4
Publication status	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) - Sinaia, Rom Duration: 9 Oct 1996 → 12 Oct 1996

Conference

Conference	Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)
City	Sinaia, Rom
Period	9/10/96 → 12/10/96

Cite this

@conference{5f80fad338134a5a8c7a28a80821b01f,

title = "APCVD doped oxides used as etch mask in KOH solution",

abstract = "This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. The experiments draw to the conclusion that the best film is densified borophosphosilicate glass with 4 wt.\% P and 23 wt.\% B. Also good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metalisation process.",

author = "P. Cosmin and M. Modreanu and S. Cosmin and C. Dunare and D. Popescu",

year = "1996",

language = "English",

pages = "257--260",

note = "Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2) ; Conference date: 09-10-1996 Through 12-10-1996",

}

TY - CONF

T1 - APCVD doped oxides used as etch mask in KOH solution

AU - Cosmin, P.

AU - Modreanu, M.

AU - Cosmin, S.

AU - Dunare, C.

AU - Popescu, D.

PY - 1996

Y1 - 1996

N2 - This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. The experiments draw to the conclusion that the best film is densified borophosphosilicate glass with 4 wt.% P and 23 wt.% B. Also good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metalisation process.

AB - This paper presents a study of APCVD doped oxides deposited on silicon substrate. Films of silicon dioxide, phosphosilicate, borosilicate, borophosilicate glass with different content of phosphorus and boron was studied as masks for etching in KOH solution. The experiments draw to the conclusion that the best film is densified borophosphosilicate glass with 4 wt.% P and 23 wt.% B. Also good results were obtained for densified borosilicate glass. The densification treatment used is compatible with the aluminium metalisation process.

UR - https://www.scopus.com/pages/publications/0030396903

M3 - Paper

AN - SCOPUS:0030396903

SP - 257

EP - 260

T2 - Proceedings of the 1996 International Semiconductor Conference. Part 2 (of 2)

Y2 - 9 October 1996 through 12 October 1996

ER -

APCVD doped oxides used as etch mask in KOH solution

Abstract

Conference

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