Arsenic Junction Thermal Stability and High-Dose Boron-Pocket Activation During SPER in nMOS Transistors
- S. Severi
- , K. De Meyer
- , B. J. Pawlak
- , R. Duffy
- , E. Augendre
- , K. Henson
- , R. Lindsay
- Interuniversitair Micro-Elektronica Centrum
- KU Leuven
- NXP Semiconductors
Research output: Contribution to journal › Article › peer-review