Atmospheric pressure glow discharge CVD of TiO2 thin films

John L. Hodgkinson; David W. Sheel; Heather M. Yates; Martin J. Davis; Martyn E. Pemble

Atmospheric pressure glow discharge CVD of TiO₂ thin films

John L. Hodgkinson
, David W. Sheel
, Heather M. Yates
, Martin J. Davis
, Martyn E. Pemble

University College Cork

Research output: Contribution to conference › Paper › peer-review

Abstract

The poster illustrates recent progress in the use of an atmospheric pressure glow discharge CVD (AP GDCVD) system to produce dense, uniform, amorphous TiO₂ thin films on barrier glass, sub-stoichiometric films were produced while film stoichiometry could be improved by post growth treatment in the glow discharge system in the presence of O₂. The possible incorporation of N-doping into TiO₂ during APGDCVD growth has been examined. Preliminary results suggest that addition of NH₃ to the plasma process gas results in N incorporation at significant levels (ca.5 atomic percent). Post growth treatment in He/NH₃ plasma also appears to result in N-incorporation, but at significantly lower levels (ca.3 atomic percent). Results are discussed in terms of possible applications of AP GDCVD- grown TiO₂ coatings.

Original language	English
Pages	889-896
Number of pages	8
Publication status	Published - 2005
Event	15th European Conference on Chemical Vapor Deposition, EUROCVD-15 - Bochum, Germany Duration: 5 Sep 2005 → 9 Sep 2005

Conference

Conference	15th European Conference on Chemical Vapor Deposition, EUROCVD-15
Country/Territory	Germany
City	Bochum
Period	5/09/05 → 9/09/05

Cite this

@conference{d97bfa5e57bd4455a81034ff65b54b5c,

title = "Atmospheric pressure glow discharge CVD of TiO2 thin films",

abstract = "The poster illustrates recent progress in the use of an atmospheric pressure glow discharge CVD (AP GDCVD) system to produce dense, uniform, amorphous TiO2 thin films on barrier glass, sub-stoichiometric films were produced while film stoichiometry could be improved by post growth treatment in the glow discharge system in the presence of O2. The possible incorporation of N-doping into TiO2 during APGDCVD growth has been examined. Preliminary results suggest that addition of NH3 to the plasma process gas results in N incorporation at significant levels (ca.5 atomic percent). Post growth treatment in He/NH3 plasma also appears to result in N-incorporation, but at significantly lower levels (ca.3 atomic percent). Results are discussed in terms of possible applications of AP GDCVD- grown TiO2 coatings.",

author = "Hodgkinson, \{John L.\} and Sheel, \{David W.\} and Yates, \{Heather M.\} and Davis, \{Martin J.\} and Pemble, \{Martyn E.\}",

year = "2005",

language = "English",

pages = "889--896",

note = "15th European Conference on Chemical Vapor Deposition, EUROCVD-15 ; Conference date: 05-09-2005 Through 09-09-2005",

}

TY - CONF

T1 - Atmospheric pressure glow discharge CVD of TiO2 thin films

AU - Hodgkinson, John L.

AU - Sheel, David W.

AU - Yates, Heather M.

AU - Davis, Martin J.

AU - Pemble, Martyn E.

PY - 2005

Y1 - 2005

N2 - The poster illustrates recent progress in the use of an atmospheric pressure glow discharge CVD (AP GDCVD) system to produce dense, uniform, amorphous TiO2 thin films on barrier glass, sub-stoichiometric films were produced while film stoichiometry could be improved by post growth treatment in the glow discharge system in the presence of O2. The possible incorporation of N-doping into TiO2 during APGDCVD growth has been examined. Preliminary results suggest that addition of NH3 to the plasma process gas results in N incorporation at significant levels (ca.5 atomic percent). Post growth treatment in He/NH3 plasma also appears to result in N-incorporation, but at significantly lower levels (ca.3 atomic percent). Results are discussed in terms of possible applications of AP GDCVD- grown TiO2 coatings.

AB - The poster illustrates recent progress in the use of an atmospheric pressure glow discharge CVD (AP GDCVD) system to produce dense, uniform, amorphous TiO2 thin films on barrier glass, sub-stoichiometric films were produced while film stoichiometry could be improved by post growth treatment in the glow discharge system in the presence of O2. The possible incorporation of N-doping into TiO2 during APGDCVD growth has been examined. Preliminary results suggest that addition of NH3 to the plasma process gas results in N incorporation at significant levels (ca.5 atomic percent). Post growth treatment in He/NH3 plasma also appears to result in N-incorporation, but at significantly lower levels (ca.3 atomic percent). Results are discussed in terms of possible applications of AP GDCVD- grown TiO2 coatings.

UR - https://www.scopus.com/pages/publications/31744432810

M3 - Paper

AN - SCOPUS:31744432810

SP - 889

EP - 896

T2 - 15th European Conference on Chemical Vapor Deposition, EUROCVD-15

Y2 - 5 September 2005 through 9 September 2005

ER -

Atmospheric pressure glow discharge CVD of TiO₂ thin films

Abstract

Conference

Other files and links

Fingerprint

Cite this